ITS436L2 PDF даташит
Спецификация ITS436L2 изготовлена «Infineon» и имеет функцию, называемую «Smart High-Side Power Switch». |
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Детали детали
Номер произв | ITS436L2 |
Описание | Smart High-Side Power Switch |
Производители | Infineon |
логотип |
12 Pages
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PROFET® ITS436L2
Smart High-Side Power Switch
for Industrial Applications
One Channel: 38mΩ
Status Feedback
Product Summary
Package
On-state Resistance
Operating Voltage
Nominal load current
Current limitation
Operating Temperature
RON
Vbb(on)
IL(NOM)
IL(SCr)
Ta
38mΩ
4.75...41V
9.8A
40A
-30 …+85°C
PG-TO220-5-11
PG-TO220-5-12
Standard
Straight
General Description
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
• Providing embedded protective functions
Applications
• µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads in
industrial applications
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
• Very low standby current
• CMOS compatible input
• Fast demagnetization of inductive loads
• Stable behaviour at undervoltage
• Wide operating voltage range
• Logic ground independent from load ground
Protection Functions
• Short circuit protection
• Overload protection
• Current limitation
• Thermal shutdown
• Overvoltage protection (including load dump) with external
resistor
• Reverse battery protection with external resistor
• Loss of ground and loss of Vbb protection
• Electrostatic discharge protection (ESD)
Block Diagram
Vbb
IN Logic
with
protection
ST functions
OUT
Diagnostic Function
• Diagnostic feedback with open drain output
• Open load detection in ON-state
• Feedback of thermal shutdown in ON-state
PROFET
GND
Load
Infineon Technologies AG
Page 1
2006-Mar-28
No Preview Available ! |
Functional diagram
PROFET® ITS436L2
IN
ST
GND
overvoltage
protection
internal
voltage supply
logic
ESD
gate
control
+
charge
pump
current limit
clamp for
inductive load
temperature
sensor
Open load
detection
VBB
OUT
LOAD
PROFET
Pin Definitions and Functions
Pin Symbol
Function
1 GND
Logic ground
2
IN
Input, activates the power switch in
case of logical high signal
3
Vbb
Positive power supply voltage
The tab is shorted to pin 3
4 ST Diagnostic feedback, low on failure
5 OUT
Tab Vbb
Output to the load
Positive power supply voltage
The tab is shorted to pin 3
Pin configuration
(top view)
Tab = VBB
1 2 (3) 4 5
GND IN
ST OUT
Infineon Technologies AG
Page 2
2006-Mar-28
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PROFET® ITS436L2
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Values Unit
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
Tj Start=-40 ...+150°C
Load dump
RI2)= 2 Ω,
protection1) VLoadDump =
RL= 4.0 Ω, td= 200 ms,
VA + Vs, VA = 13.5
IN= low or high
V
Load current (Current limit, see page 5)
Junction temperature
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C
(See diagram on page 8) IL(ISO) = 9.8
const.
A, RL
=
0
Ω,
E4)AS=0.33J:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7
Vbb
Vbb
VLoad
3
dump
IL
Tj
Ta
Tstg
Ptot
ZL
VESD
VIN
IIN
IST
43
24
60
self-limited
+150
-30 … +85
-40 ...+105
75
V
V
V
A
°C
W
5.0 mH
1.0 kV
4.0
8.0
-10 ... +16
±2.0
±5.0
V
mA
Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
chip - case: RthJC
junction - ambient (free air): RthJA
device on pcb5):
Values
min typ max
-- -- 1.75
-- -- 75
-- 33
--
Unit
K/W
1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended).
2)
3)
4)
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
EAS is the maximum inductive switch-off energy
5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Infineon Technologies AG
Page 3
2006-Mar-28
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