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D1062 PDF даташит

Спецификация D1062 изготовлена ​​​​«Sanyo» и имеет функцию, называемую «NPN Transistor - 2SD1062».

Детали детали

Номер произв D1062
Описание NPN Transistor - 2SD1062
Производители Sanyo
логотип Sanyo логотип 

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D1062 Даташит, Описание, Даташиты
Ordering number:723H
PNP/NPN Epitaxial Planar Silicon Transistors
2SB826/2SD1062
50V/12A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
Features
· Low-saturation collector-to-emitter voltage :
VCE(sat)=–0.5V (PNP), 0.4V (NPN) max.
· Wide ASO leading to high resistance to breakdown.
Package Dimensions
unit:mm
2010C
[2SB826/2SD1062]
( ) : 2SB826
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)5A
VCE=(–)5V, IC=(–)1A
* : The 2SB826/2SD1062 are classified by 1A hFE as follows :
70 Q 140 100 R 200 140 S 280
1 : Base
2 : Collector
3 : Emitter
JEDEC : TO-220AB
EIAJ : SC46
Ratings
(–)60
(–)50
(–)6
(–)12
(–)15
40
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ
70*
30
10
max
(–)0.1
(–)0.1
280*
Unit
mA
mA
MHz
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/10996TS (KOTO)/8-3832/D251MH/4027KI/3135KI No.723–1/4









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D1062 Даташит, Описание, Даташиты
Parameter
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Fall Time
Storage Time
Switching Time Test Circuit
2SB826/2SD1062
Symbol
Conditions
VCE(sat) IC=(–)6A, IB=(–)0.3A
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=(–)1mA, IE=0
IC=(–)1mA, RBE=
IE=(–)1mA, IC=0
See specified test circuit.
tf See specified test circuit.
tstg See specified test circuit.
Ratings
min typ
(–)60
(–)50
(–)6
(0.2)
0.1
(0.4)
1.2
(0.1)
0.05
max
0.4
(–0.5)
Unit
V
V
V
V
V
µs
µs
µs
µs
µs
µs
No.723–2/4









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D1062 Даташит, Описание, Даташиты
2SB826/2SD1062
No.723–3/4










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