DataSheet26.com

B633 PDF даташит

Спецификация B633 изготовлена ​​​​«Sanyo» и имеет функцию, называемую «PNP Transistor - 2SB633».

Детали детали

Номер произв B633
Описание PNP Transistor - 2SB633
Производители Sanyo
логотип Sanyo логотип 

4 Pages
scroll

No Preview Available !

B633 Даташит, Описание, Даташиты
Ordering number:513H
PNP/NPN Epitaxial Planar Silicon Transistor
2SB633/2SD613
85V/6A, AF 25 to 35W Output Applications
Features
· High breakdown voltage, VCEO85V, high current 6A.
· AF25 to 35W output.
Package Dimensions
unit:mm
2010C
[2SB633/2SD613]
( ) : 2SB633
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Voltage
Output Capacitance
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VBE
Cob
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)1A
VCE=(–)5V, IC=(–)3A
VCE=(–)5V, IC=(–)1A
IC=(–)4A, IB=(–)0.4A
IE=(–)5A, IC=(–)1A
VCB=(–)10V, f=1MHz
JEDEC : TO-220AB
EIAJ : SC-46
1 : Base
2 : Collector
3 : Emitter
Ratings
(–)100
(–)85
(–)6
(–)6
(–)10
40
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ
40*
20
15
(150)
110
max
(–)0.1
(–)0.1
320*
(–)2.0
(–)1.5
Unit
mA
mA
MHz
V
V
pF
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/90595MO (KOTO)/D251MH/4017KI/1115MW, TS/No.174, 8-2629 No.513–1/4









No Preview Available !

B633 Даташит, Описание, Даташиты
2SB633/2SD613
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Brakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Fall Time
Storage Time
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)CEO
V(BR)EBO
ton
IC=(–)5mA, IE=0
IC=(–)5mA, RBE=
IC=(–)50mA, RBE=
IE=(–)5mA, IC=0
See specified Test Circuit
tf See specified Test Circuit
tstg See specified Test Circuit
* : The 2SB633/2SD613 are classified by 1A hFE as follows :
40 C 80 60 D 120
100 E 200
160 F 320
Switching Time Test Circuit
Ratings
min typ
(–)100
(–)85
(–)85
(–)6
(0.16)
0.28
(0.33)
0.50
(1.45)
3.60
max
Unit
V
V
V
V
µs
µs
µs
µs
µs
µs
No.513–2/4









No Preview Available !

B633 Даташит, Описание, Даташиты
2SB633/2SD613
No.513–3/4










Скачать PDF:

[ B633.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
B631PNP Transistor - 2SB631SavantIC
SavantIC
B631KPNP Transistor - 2SB631KSanyo Semicon Device
Sanyo Semicon Device
B633PNP Transistor - 2SB633Mospec Semiconductor
Mospec Semiconductor
B633PNP Transistor - 2SB633Sanyo
Sanyo

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск