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K1062 PDF даташит
| Спецификация K1062 изготовлена «Toshiba» и имеет функцию, называемую «MOSFET ( Transistor ) - 2SK1062». |
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Детали детали
| Номер произв | K1062 |
| Описание | MOSFET ( Transistor ) - 2SK1062 |
| Производители | Toshiba |
| логотип |  |
5 Pages
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1062
High Speed Switching Applications
Analog Switching Applications
Interface Applications
2SK1062
Unit: mm
• Excellent switching time: ton = 14 ns (typ.)
• High forward transfer admittance: |Yfs| = 100 ms (min)
@ID = 50 mA
• Low on resistance: RDS (ON) = 0.6 Ω (typ.) @ ID = 50 mA
• Enhancement-mode
• Complementary to 2SJ168
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
VDS
VGSS
ID
IDP
PD
Tch
Tstg
60
±20
200
800
200
150
−55~150
V
V
mA
mW
°C
°C
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1 2007-11-01
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Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Drain-source ON voltage
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
⎪Yfs⎪
RDS (ON)
VDS (ON)
Ciss
Crss
Coss
VGS = ±10 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VGS = 0
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 50 mA
ID = 50 mA, VGS = 10 V
ID = 50 mA, VGS = 10 V
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0, f = 1 MHz
tr
Switching time
Turn-on time
Fall time
ton
tf
2SK1062
Min Typ. Max Unit
⎯ ⎯ ±100 nA
⎯ ⎯ 10 μA
60 ⎯ ⎯
V
2 ⎯ 3.5 V
100 ⎯
⎯ mS
⎯ 0.6 1.0 Ω
⎯ 30 50 mV
⎯ 55 65 pF
⎯ 13 18 pF
⎯ 40 50 pF
⎯8⎯
⎯ 14 ⎯
ns
⎯ 35 ⎯
Turn-off Time
toff VIN: tr, tf < 5 ns
D.U <= 1% (Zout = 50 Ω)
⎯
Note: This transistor is the electrostatic sensitive device. Please handle with caution.
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2SK1062
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| Номер в каталоге | Описание | Производители |
| K1060 | MOSFET ( Transistor ) - 2SK1060 |  NEC |
| K1061 | MOSFET ( Transistor ) - 2SK1061 | Toshiba |
| K1062 | MOSFET ( Transistor ) - 2SK1062 | Toshiba |
| K1065 | MOSFET ( Transistor ) - 2SK1065 |  Sanyo |
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