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NCE85H15 PDF даташит

Спецификация NCE85H15 изготовлена ​​​​«NCE Power» и имеет функцию, называемую «NCE N-Channel Enhancement Mode Power MOSFET».

Детали детали

Номер произв NCE85H15
Описание NCE N-Channel Enhancement Mode Power MOSFET
Производители NCE Power
логотип NCE Power логотип 

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NCE85H15 Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE85H15
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE85H15 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. This device is
suitable for use in PWM, load switching and general purpose
applications.
General Features
VDS =85V,ID =150A
RDS(ON) <4.8m@ VGS=10V
(Typ:3.9m)
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Special designed for convertors and power controls
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE85H15
NCE85H15
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Peak diode recovery voltage
ID (100)
IDM
PD
dv/dt
Derating factor
Limit
85
±20
150
106
600
270
15
1.8
Unit
V
V
A
A
A
W
V/ns
W/
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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NCE85H15 Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE85H15
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
1100
-55 To 175
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.56 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
85 89
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=85V,VGS=0V
- - 1 μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2 2.85
4
V
Drain-Source On-State Resistance
Forward Transconductance
RDS(ON)
gFS
VGS=10V, ID=40A
VDS=25V,ID=40A
- 3.9
110 -
4.8
-
m
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 8800
- 680
-
-
PF
PF
Crss
- 520
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 22.5
-
nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
VDD=30V,ID=2A,RL=15- 15
-
td(off)
,RG=2.5,VGS=10V
- 70
-
tf
- 18.75
-
nS
nS
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=30V,ID=30A,
VGS=10V
- 200
- 40
- 60
-
-
-
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=40A
- - 1.2
V
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
IS
- - 150
A
trr Tj=25,IF=75A,di/dt=100A/μs -
45 nS
Qrr (Note3) - 70 nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=40V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
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NCE85H15 Даташит, Описание, Даташиты
http://www.ncepower.com
Test circuit
1EAS test Circuit
Pb Free Product
NCE85H15
2Gate charge test Circuit
3Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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Номер в каталогеОписаниеПроизводители
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