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NCE30H10K PDF даташит

Спецификация NCE30H10K изготовлена ​​​​«NCE Power Semiconductor» и имеет функцию, называемую «NCE N-Channel Enhancement Mode Power MOSFET».

Детали детали

Номер произв NCE30H10K
Описание NCE N-Channel Enhancement Mode Power MOSFET
Производители NCE Power Semiconductor
логотип NCE Power Semiconductor логотип 

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NCE30H10K Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE30H10K
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE30H10K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =30V,ID =100A
RDS(ON) <5.5m@ VGS=10V
(Typ:4m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE30H10K
NCE30H10K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
100
70
400
110
350
-55 To 175
Unit
V
V
A
A
A
W
mJ
Wuxi NCE Power Semiconductor Co., Ltd
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NCE30H10K Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE30H10K
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.36 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=30V,VGS=0V
30 -
-
V
- - 1 μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1 1.6
3
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=20A
- 4.0 5.5
m
Forward Transconductance
gFS
VDS=10V,ID=20A
50 -
-
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
3300
1300
200
PF
PF
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD=15V,ID=60A
VGS=4.5V,RGEN=1.8
- 11
- 160
- 25
-
-
-
nS
nS
nS
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tf
- 60
-
nS
Qg
Qgs
VDS=15V,ID=30A,
VGS=5V
100
25
nC
nC
Qgd 45 nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=20A
- - 1.2
V
Diode Forward Current (Note 2)
IS
-
- - 100
A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF = 60A
- 56
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 110
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=15V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
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NCE30H10K Даташит, Описание, Даташиты
http://www.ncepower.com
Test circuit
1EAS test Circuits
Pb Free Product
NCE30H10K
2Gate charge test Circuit:
3Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
v1.1










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