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NCE3050I PDF даташит

Спецификация NCE3050I изготовлена ​​​​«NCE Power Semiconductor» и имеет функцию, называемую «NCE N-Channel Enhancement Mode Power MOSFET».

Детали детали

Номер произв NCE3050I
Описание NCE N-Channel Enhancement Mode Power MOSFET
Производители NCE Power Semiconductor
логотип NCE Power Semiconductor логотип 

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NCE3050I Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE3050I
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE3050I uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
VDS =30V,ID =50A
RDS(ON) < 11m@ VGS=10V
RDS(ON) < 16m@ VGS=5V
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
TO-251 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE3050I
NCE3050I
TO-251
Reel Size
-
Tape width
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Limit
30
±20
50
35
140
60
0.4
Quantity
-
Unit
V
V
A
A
A
W
W/
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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NCE3050I Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE3050I
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
70
-55 To 175
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
2.5 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
30 33
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
- - 1 μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1 1.6
3
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=25A
VGS=5V, ID=20A
-8
- 10
11
16
m
Forward Transconductance
gFS
VDS=5V,ID=20A
15 -
-
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=15V,VGS=0V,
F=1.0MHz
- 2000
- 280
-
-
PF
PF
Crss
- 160
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 10
-
nS
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=15V,ID=20A
VGS=10V,RGEN=1.8
-8
- 30
-
-
nS
nS
Turn-Off Fall Time
tf
- 5 - nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=10V,ID=25A,
VGS=10V
- 23
-7
-
-
nC
nC
Qgd
- 4.5
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=25A
- 0.85 1.2
V
Diode Forward Current (Note 2)
IS
--
40
A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF = 40A
- 22
35
nS
Qrr
di/dt = 100A/μs(Note3)
- 12
20
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=15V,VG=10V,L=1mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
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NCE3050I Даташит, Описание, Даташиты
http://www.ncepower.com
Test circuit
1EAS test Circuits
Pb Free Product
NCE3050I
2Gate charge test Circuit:
3Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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