CM3400 PDF даташит
Спецификация CM3400 изготовлена «CHIMICRON SEMICONDUCTOR» и имеет функцию, называемую «N-Channel Enhancement Mode Power MOSFET». |
|
Детали детали
Номер произв | CM3400 |
Описание | N-Channel Enhancement Mode Power MOSFET |
Производители | CHIMICRON SEMICONDUCTOR |
логотип |
3 Pages
No Preview Available ! |
CM3400
N-Channel Enhancement Mode Power MOSFET
30VDS/ ±12VGS/5.8A(ID)
Part No
CM3400
Description
The NCE3400 uses advanced trench technology
to provide excellent RDS(ON), low gate charge
and operation with gate voltages as low as 2.5V.
This device is suitable for use as a Battery
protection or in other Switching application.
Application
●PWM applications
●Load switch
●Power management
Product Summary
VDS=30V ID= 5.8A
RDS(ON)< 59mΩ@ VGS=2.5V
RDS(ON)< 45mΩ@ VGS=4.5V
RDS(ON)< 41mΩ@ VGS=10V
D
S
G
SOT-23 Package
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Maximum
Drain-Source Voltage
Gate-Source Voltage
VDS 30
VGS ±12
Continuous Current Drain
ID 5.8
Pulsed Drain Current(Note 1)
IDM 30
Power Description
PD 1.4
Operating Junction and Storage Temperature Tj, TSTG
Range
-55°C to 150°.
Units
V
V
A
A
W
℃
TAIWAN CHIMICRON SEMICONDUCTOR CO., LTD
Rev. 1. 3 Dec. 2012
www.chimicron.com [email protected]
Page 1 of 3
No Preview Available ! |
CM3400
N-Channel Enhancement Mode Power MOSFET
Electrical Characteristics (TA=25℃unless otherwise noted)
Symbol
Parameter
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Drain-to-Source Leakage Current
Test Conditions
VGS = 0V, ID=-250μA
VDS=-24V,VGS=0V
IGSS
Gate-Body Leakage Current
VGS=±12V,VDS=0V
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Trans conductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Current (Note 2)
Diode Forward Voltage (Note 3) VSD
VGS(th)
RDS(O
N)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
td(off)
Qg
Qgs
Qgd
VDS=VGS,ID=250μA
VGS=2.5V, ID=4A
VGS=4.5V, ID=2.9A
VGS=10V, ID=2.9A
VDS=5V,ID=2.9A
VDS=15V,VGS=0V,
F=1.0MHz
VDD=15V,ID=2.9A
VGS=10V,RGEN=3Ω
VDS=15V,ID=5.8A,
VGS=4.5V
VGS=0V,IS=2.9A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤10 sec.
3. Pulse Test: Pulse Width ≤300μs, Duty Cycle ≤2%.
4. Guaranteed by design, not subject to production
Ma
Min Type
Units
x
30 33 - V
1 μA
±1
--
nA
00
0.7 0.9 1.4 V
- 45 59
- 31 45 mΩ
28 41
- 10 - S
- 623 - PF
- 99 - PF
- 77 - PF
- 3.3 - nS
- 4.8 - nS
- 26 - nS
- 4 - nS
- 9.5 - nC
- 1.5 - nC
- 3 - nC
- - 2.9 A
- 0.75 -1.2 v
TAIWAN CHIMICRON SEMICONDUCTOR CO., LTD
Rev. 1. 3 Dec. 2012
www.chimicron.com [email protected]
Page 2 of 3
No Preview Available ! |
CM3400
N-Channel Enhancement Mode Power MOSFET
Typical Electrical and Thermal Characteristics
Figure 1: Switching Test Circuit
Figure 2: Switching Waveforms
TAIWAN CHIMICRON SEMICONDUCTOR CO., LTD
Rev. 1. 3 Dec. 2012
www.chimicron.com [email protected]
Page 3 of 3
Скачать PDF:
[ CM3400.PDF Даташит ]
Номер в каталоге | Описание | Производители |
CM3400 | Micropower Universal Supply Voltage Supervisor | California Micro Devices |
CM3400 | N-Channel Enhancement Mode Power MOSFET | CHIMICRON SEMICONDUCTOR |
CM3403 | Micropower Supply Voltage Supervisor | California Micro Devices |
CM3404 | Micropower Supply Voltage Supervisor | California Micro Devices |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |