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NCE2010E PDF даташит

Спецификация NCE2010E изготовлена ​​​​«NCE Power Semiconductor» и имеет функцию, называемую «NCE N-Channel Enhancement Mode Power MOSFET».

Детали детали

Номер произв NCE2010E
Описание NCE N-Channel Enhancement Mode Power MOSFET
Производители NCE Power Semiconductor
логотип NCE Power Semiconductor логотип 

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NCE2010E Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE2010E
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2010E uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
General Features
VDS = 20V,ID =7A
RDS(ON) < 27m@ VGS=2.5V
RDS(ON) < 21m@ VGS=4.5V
ESD Rating: 2000V HBM
High power and current handing capability
Lead free product is acquired
Surface mount package
Schematic diagram
Marking and pin assignment
Application
PWM application
Load switch
TSSOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2010E
NCE2010E
TSSOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
20
±12
7
30
1.5
-55 To 150
83.3
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=20V,VGS=0V
Min Typ Max Unit
20 21.5
--
23
1
V
μA
Wuxi NCE Power Semiconductor Co., Ltd
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NCE2010E Даташит, Описание, Даташиты
http://www.ncepower.com
Parameter
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Symbol
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Pb Free Product
NCE2010E
Condition
VGS=±10V,VDS=0V
Min Typ Max
- - ±10
Unit
μA
VDS=VGS,ID=250μA
VGS=4.5V, ID=6.5A
VGS=2.5V, ID=5.5A
VDS=5V,ID=7A
0.45 0.7
- 15
- 20
- 20
1.0
21
27
-
V
m
m
S
VDS=10V,VGS=0V,
F=1.0MHz
- 1150
- 185
- 145
-
-
-
PF
PF
PF
VDD=10V,RL=1.35
VGS=5V,RGEN=3
VDS=10V,ID=7A,
VGS=4.5V
-6
- 13
- 52
- 16
- 15
- 0.8
- 3.2
-
-
nS
nS
nS
nS
nC
nC
nC
VGS=0V,IS=1A
- - 1.2
--
7
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
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NCE2010E Даташит, Описание, Даташиты
http://www.ncepower.com
Typical Electrical and Thermal Characteristics
Vdd
Rl
Vin
D Vout
Vgs Rgen
G
S
Figure 1:Switching Test Circuit
Pb Free Product
NCE2010E
td(on)
VOUT
VIN
10%
ton
tr
td(off)
toff
tf
90%
INVERTED
10%
90%
10%
50%
90%
50%
PULSE WIDTH
Figure 2:Switching Waveforms
TJ-Junction Temperature()
Figure 3 Power Dissipation
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
Vds Drain-Source Voltage (V)
Figure 5 Output Characteristics
TJ-Junction Temperature()
Figure 8 Drain-Source On-Resistance
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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Номер в каталогеОписаниеПроизводители
NCE2010ENCE N-Channel Enhancement Mode Power MOSFETNCE Power Semiconductor
NCE Power Semiconductor

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