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PDF NCE2012 Data sheet ( Hoja de datos )
| Número de pieza | NCE2012 | |
| Descripción | NCE N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | NCE Power Semiconductor | |
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Hay una vista previa y un enlace de descarga de NCE2012 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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http://www.ncepower.com
Pb Free Product
NCE2012
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2012 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
●VDS =20V,ID =12A
RDS(ON) < 8mΩ @ VGS=10V
RDS(ON) < 11mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
Schematic diagram
Application
● DC/DC Converter
● Notebook Vcore
Marking and pin Assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2012
NCE2012
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TA=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
Limit
30
±20
12
8
40
2.5
-55 To 150
50
Unit
V
V
A
A
A
W
℃
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page  
http://www.ncepower.com
Pb Free Product
NCE2012
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 Current vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCE2012.PDF ] | |
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