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NCE3012S PDF даташит

Спецификация NCE3012S изготовлена ​​​​«NCE Power Semiconductor» и имеет функцию, называемую «NCE P-Channel Enhancement Mode Power MOSFET».

Детали детали

Номер произв NCE3012S
Описание NCE P-Channel Enhancement Mode Power MOSFET
Производители NCE Power Semiconductor
логотип NCE Power Semiconductor логотип 

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NCE3012S Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE3012S
NCE P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE3012S uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
GENERAL FEATURES
VDS = -30V,ID = -12A
RDS(ON) < 20m@ VGS=-4.5V
RDS(ON) < 15m@ VGS=-10V
Schematic diagram
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application
PWM applications
Load switch
Power management
Marking and pin Assignment
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
3012S
NCE3012S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
-30
±20
-12
-48
3
-55 To 150
41.67
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Min Typ Max Unit
Wuxi NCE Power Semiconductor Co., Ltd
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NCE3012S Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE3012S
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=-250μA
VDS=-30V,VGS=0V
VGS=±20V,VDS=0V
-30 -33
-
--
-1
- - ±100
V
μA
nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-10V, ID=-10A
VGS=-4.5V, ID=-7A
VDS=-10V,ID=-10A
-1 -1.5
--
--
20 -
-3
15
20
-
V
m
m
S
Clss
Coss
VDS=-15V,VGS=0V,
F=1.0MHz
- 1750
- 215
-
-
PF
PF
Crss
- 180
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=-15V, ID=-10A,
VGS=-10V,RGEN=1
VDS=-15V,ID=-10A,VGS=-10V
-
-
-
-
-
-
-
9
8
28
10
24
3.5
6
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VSD
VGS=0V,IS=-2A
- - -1.2 V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
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NCE3012S Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE3012S
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
td(on)
ton
tr
td(off)
toff
tf
VOUT
VIN
10%
90%
INVERTED
10%
90%
10%
50%
90%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
TJ-Junction Temperature()
Figure 3 Power Dissipation
TJ-Junction Temperature()
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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Номер в каталогеОписаниеПроизводители
NCE3012SNCE P-Channel Enhancement Mode Power MOSFETNCE Power Semiconductor
NCE Power Semiconductor

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