NCE3007S PDF даташит
Спецификация NCE3007S изготовлена «NCE Power Semiconductor» и имеет функцию, называемую «NCE P-Channel Enhancement Mode Power MOSFET». |
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Детали детали
Номер произв | NCE3007S |
Описание | NCE P-Channel Enhancement Mode Power MOSFET |
Производители | NCE Power Semiconductor |
логотип |
7 Pages
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Pb Free Product
NCE3007S
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE3007S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in load switch and battery protection
applications.
General Features
● VDS =-30V,ID =-6.5A
RDS(ON) < 46mΩ @ VGS=-10V
RDS(ON) < 72mΩ @ VGS=-4.5V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
Application
● Load switch
● battery protection
Marking and pin assignment
100% UIS Tested
100% Rg Tested
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
3007
NCE3007S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
-30
±20
-6.5
-4.5
-30
3.1
-55 To 150
Unit
V
V
A
A
A
W
℃
Wuxi NCE Power Semiconductor Co., Ltd
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Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-30V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-6.5A
VGS=-4.5V, ID=-5A
Forward Transconductance
gFS VDS=-5V,ID=-6.5A
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=-15V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=-15V,ID=-4A
VGS=-10V,RGEN=3Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=-15V,ID=-6.5A,
VGS=-10V
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD VGS=0V,IS=-6.5A
Diode Forward Current (Note 2)
IS
Pb Free Product
NCE3007S
40 ℃/W
Min Typ Max Unit
-30 -33
-
--
1
- - ±100
V
μA
nA
-1.5 -1.9
- 30
- 53
14 -
-2.5
46
72
-
V
mΩ
S
- 520
- 100
- 65
-
-
-
PF
PF
PF
- 7.5
- 5.5
- 19
-7
- 9.2
- 1.6
- 2.2
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - -1.2
- - -6.5
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
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Test Circuit
1) EAS test Circuit
Pb Free Product
NCE3007S
2) Gate charge test Circuit
3) Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
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Номер в каталоге | Описание | Производители |
NCE3007S | NCE P-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
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