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NCE2301 PDF даташит

Спецификация NCE2301 изготовлена ​​​​«NCE Power Semiconductor» и имеет функцию, называемую «NCE P-Channel Enhancement Mode Power MOSFET».

Детали детали

Номер произв NCE2301
Описание NCE P-Channel Enhancement Mode Power MOSFET
Производители NCE Power Semiconductor
логотип NCE Power Semiconductor логотип 

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NCE2301 Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE2301
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE2301 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
General Features
VDS = -20V,ID = -3A
RDS(ON) < 140m@ VGS=-2.5V
RDS(ON) < 110m@ VGS=-4.5V
Schematic diagram
High power and current handing capability
Lead free product is acquired
Surface mount package
Marking and pin assignment
Application
PWM applications
Load switch
Power management
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2301
NCE2301
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current -Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
-20
±12
-3
-10
1
-55 To 150
125
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-20V,VGS=0V
Min Typ Max Unit
-20 -24
--
-
-1
V
μA
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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NCE2301 Даташит, Описание, Даташиты
http://www.ncepower.com
Parameter
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Symbol
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Pb Free Product
NCE2301
Condition
VGS=±12V,VDS=0V
Min Typ Max
- - ±100
Unit
nA
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-3A
VGS=-2.5V, ID=-2A
VDS=-5V,ID=-2A
-0.4 -0.7
- 64
- 89
5-
-1
110
140
-
V
m
m
S
VDS=-10V,VGS=0V,
F=1.0MHz
- 405
- 75
- 55
-
-
-
PF
PF
PF
VDD=-10V,ID=-1A
VGS=-4.5V,RGEN=10
VDS=-10V,ID=-3A,
VGS=-2.5V
- 11
-
- 35
-
- 30
-
- 10
-
- 3.3 12
- 0.7
-
- 1.3
-
nS
nS
nS
nS
nC
nC
nC
VGS=0V,IS=1.3A
- - -1.2 V
--
-3
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
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NCE2301 Даташит, Описание, Даташиты
http://www.ncepower.com
Typical Electrical and Thermal Characteristics
Figure 1:Switching Test Circuit
Pb Free Product
NCE2301
td(on)
VOUT
VIN
10%
ton
tr
td(off)
toff
tf
90%
INVERTED
10%
90%
10%
50%
90%
50%
PULSE WIDTH
Figure 2:Switching Waveforms
TJ-Junction Temperature()
Figure 3 Power Dissipation
TJ-Junction Temperature()
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
Figure 5 Output Characteristics
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
v1.0










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