NCE2301 PDF даташит
Спецификация NCE2301 изготовлена «NCE Power Semiconductor» и имеет функцию, называемую «NCE P-Channel Enhancement Mode Power MOSFET». |
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Детали детали
Номер произв | NCE2301 |
Описание | NCE P-Channel Enhancement Mode Power MOSFET |
Производители | NCE Power Semiconductor |
логотип |
7 Pages
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Pb Free Product
NCE2301
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE2301 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
General Features
● VDS = -20V,ID = -3A
RDS(ON) < 140mΩ @ VGS=-2.5V
RDS(ON) < 110mΩ @ VGS=-4.5V
Schematic diagram
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Marking and pin assignment
Application
● PWM applications
● Load switch
● Power management
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2301
NCE2301
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current -Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
-20
±12
-3
-10
1
-55 To 150
125
Unit
V
V
A
A
W
℃
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-20V,VGS=0V
Min Typ Max Unit
-20 -24
--
-
-1
V
μA
Wuxi NCE Power Semiconductor Co., Ltd
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Parameter
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Symbol
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Pb Free Product
NCE2301
Condition
VGS=±12V,VDS=0V
Min Typ Max
- - ±100
Unit
nA
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-3A
VGS=-2.5V, ID=-2A
VDS=-5V,ID=-2A
-0.4 -0.7
- 64
- 89
5-
-1
110
140
-
V
mΩ
mΩ
S
VDS=-10V,VGS=0V,
F=1.0MHz
- 405
- 75
- 55
-
-
-
PF
PF
PF
VDD=-10V,ID=-1A
VGS=-4.5V,RGEN=10Ω
VDS=-10V,ID=-3A,
VGS=-2.5V
- 11
-
- 35
-
- 30
-
- 10
-
- 3.3 12
- 0.7
-
- 1.3
-
nS
nS
nS
nS
nC
nC
nC
VGS=0V,IS=1.3A
- - -1.2 V
--
-3
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
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Typical Electrical and Thermal Characteristics
Figure 1:Switching Test Circuit
Pb Free Product
NCE2301
td(on)
VOUT
VIN
10%
ton
tr
td(off)
toff
tf
90%
INVERTED
10%
90%
10%
50%
90%
50%
PULSE WIDTH
Figure 2:Switching Waveforms
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
TJ-Junction Temperature(℃)
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
Figure 5 Output Characteristics
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
v1.0
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Номер в каталоге | Описание | Производители |
NCE2301 | NCE P-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
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NCE2302B | N-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
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