DataSheet26.com

HT3401 PDF даташит

Спецификация HT3401 изготовлена ​​​​«HOTCHIP» и имеет функцию, называемую «P-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв HT3401
Описание P-Channel Enhancement Mode Field Effect Transistor
Производители HOTCHIP
логотип HOTCHIP логотип 

5 Pages
scroll

No Preview Available !

HT3401 Даташит, Описание, Даташиты
OB2269
HT3401
P-Channel Enhancement Mode Field Effect Transistor
General Description
The HT3401 uses advanced trench technology to
Provide excellent RDS(ON),low gate change and
Operation with gate voltages as low as 2.5V.This
Device is suitable for use as a load switch or in PWM
applications. Standard product HT3401 is Pb-free
(meets ROHS & Sony 259 specifications).
Features
VDS(V)=-30V
ID=-4.2A(VGS=-10V)
RDS(ON)<50mΩ(VGS=-10V)
RDS(ON)<65mΩ(VGS=-4.5V)
RDS(ON)<120mΩ(VGS=-2.5V)
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
Current (A)
TA=70°C
Junction and Storage Temperature Range
Power Dissipation TA=25°C
(A) TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum junction-to-Ambient(A)
Maximum junction-to-Ambient(A)
Maximum junction-to-Lead(C)
t10s
Steady-State
Steady-State
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Symbol
RθJA
RθJL
Typ
65
85
43
Maximum
-30
+12
-4.2
-3.5
-3.0
1.4
1
-55 to 150
Max
90
125
60
Units
V
V
A
W
Units
°C/W
°C/W
°C/W
Ver1.0









No Preview Available !

HT3401 Даташит, Описание, Даташиты
HT3401
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS
Drain-Source
Voltage
Breakdown ID=-250µA, VGS=0V
IDSS
Zero Gate Voltage Drain VDS=-24V,VGS=0V
Current
TJ=55
-30
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
RDS(ON) Static Drain-Source
On-Resistance
VGS=-10V, ID=-4.2A
TJ=125°C
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
gFS
Forward Transconductance
VDS=-5V, ID=-5A
VSD Diode Forward Voltage
IS=-1A,VGS=0V
Is Maximum Body-Diode Continuous Current
ISM Pulsed Body-Diode CurrentB
DYNAMIC PARAMETERS
Ciss Input Capacitance
VGS=0V, VDS=-15V, f=1MHz
Coss
Output Capacitance
Crss Reverse Transfer
Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
-0.7
-25
7
SWITCHING PARAMETERS
Qg Total Gate Charge
VGS=4.5V,
VDS=-15V,
Qgs
Gate Source Charge
ID=-4A
Qgd Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V,VDS=-15V,
RL=3.6,
RGEN=6
tf Turn-Off Fall Time
trr Body Diode Reverse IF=-4A, dI/dt=100A/µs
Recovery Time
Qrr
Body Diode Reverse
IF=-4A, dI/dt=100A/µs
Recovery Charge
Typ
-1
42
53
80
11
-0.75
954
115
77
6
9.4
2
3
6.3
3.2
38.2
12
20.2
11.2
Max
-1
-5
±100
-1.3
50
75
65
120
-1
-2.2
-30
Units
V
µA
nA
V
A
m
m
m
S
V
A
A
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
nC
Ver1.0
2









No Preview Available !

HT3401 Даташит, Описание, Даташиты
HT3401
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a
still air environment with T A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based
on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5%
max.
E. These tests are performed with the device mounted on 1 in 2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Ver1.0
3










Скачать PDF:

[ HT3401.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
HT3401P-Channel Enhancement Mode Field Effect TransistorHOTCHIP
HOTCHIP
HT340230V N-Channel MOSFETHOTCHIP
HOTCHIP
HT34061.5MHz Synchronous Buck RegulatorHOTCHIP
HOTCHIP

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск