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PDF STGIPS10K60T Data sheet ( Hoja de datos )

Número de pieza STGIPS10K60T
Descripción 600V short-circuit rugged IGBT
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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STGIPS10K60T
SLLIMM™ (small low-loss intelligent molded module)
IPM, 3-phase inverter - 10 A, 600 V short-circuit rugged IGBT
Datasheet - production data
Applications
3-phase inverters for motor drives
Home appliances, such as washing machines,
refrigerators, air conditioners and sewing
machines
SDIP-25L
Features
IPM 10 A, 600 V 3-phase IGBT inverter bridge
including control ICs for gate driving and free-
wheeling diodes
Short-circuit rugged IGBTs
VCE(sat) negative temperature coefficient
3.3 V, 5 V, 15 V CMOS/TTL inputs
comparators with hysteresis and pull down /
pull up resistors
Undervoltage lockout
Internal bootstrap diode
Interlocking function
Shut down function
DBC substrate leading to low thermal
resistance
Isolation rating of 2500 Vrms/min
4.7 kNTC for temperature control
UL recognized: UL1557 file E81734
Description
This intelligent power module provides a
compact, high performance AC motor drive in a
simple, rugged design. Combining ST proprietary
control ICs with the most advanced short-circuit-
rugged IGBT system technology, this device is
ideal for 3-phase inverters in applications such as
home appliances and air conditioners. SLLIMM™
is a trademark of STMicroelectronics.
Order code
STGIPS10K60T
Table 1. Device summary
Marking
Package
GIPS10K60T
SDIP-25L
Packaging
Tube
April 2013
This is information on a product in full production.
DocID018533 Rev 4
1/20
www.st.com
20

1 page




STGIPS10K60T pdf
STGIPS10K60T
2 Electrical ratings
Electrical ratings
2.1
Absolute maximum ratings
Table 3. Inverter part
Symbol
Parameter
VPN Supply voltage applied between P - NU, NV, NW
VPN(surge)
VCES
Supply voltage (surge) applied between P - NU,
NV, NW
Each IGBT collector emitter voltage (VIN(1) = 0)
± IC(2)
± ICP (3)
Each IGBT continuous collector current at
TC = 25°C
Each IGBT pulsed collector current
PTOT Each IGBT total dissipation at TC = 25°C
tscw
Short-circuit withstand time, VCE = 0.5 V(BR)CES
Tj = 125 °C, VCC = Vboot= 15 V, VIN (1)= 5 V
1. Applied between HINi, LINi and GND for i = U, V, W.
2. Calculated according to the iterative formula:
Value
450
500
600
10
20
33
5
ICTC= R-----t--h---j-----c---------V----C----E----T-s---aj---t-m----am---x--a---x-–----T--T--C--j---m----a---x-------I--C------T----C-------
3. Pulse width limited by max junction temperature.
Unit
V
V
V
A
A
W
µs
Symbol
Table 4. Control part
Parameter
Min.
VOUT
VCC
Vboot
VIN
Output voltage applied between OUTU, OUTV,
OUTW - GND
Low voltage power supply
Bootstrap voltage
Logic input voltage applied between HIN, LIN and
GND
VSD SD voltage
dVOUT/dt Allowed output slew rate
Vboot - 21
- 0.3
- 0.3
- 0.3
- 0.3
Max.
Unit
Vboot + 0.3
21
620
V
V
V
15 V
15 V
50 V/ns
Symbol
VISO
TC
TJ
Table 5. Total system
Parameter
Isolation withstand voltage applied between each
pin and heatsink plate (AC voltage, t = 60 sec.)
Module case operation temperature
Power chips operating junction temperature
Value
2500
-40 to 125
-40 to 150
Unit
V
°C
°C
DocID018533 Rev 4
5/20

5 Page





STGIPS10K60T arduino
STGIPS10K60T
Electrical characteristics
3.1.1
NTC thermistor
Symbol
R25
R125
B
T
Table 13. NTC thermistor
Parameter
Test conditions
Resistance
T = 25 °C
Resistance
B-constant
T = 125 °C
T = 25 °C to 85 °C
Operating temperature
Min. Typ. Max. Unit.
4.7
160
3950
k
K
-40 150 °C
Equation 1: resistance variation vs. temperature
RT
=
R25
B  T-1--
e
2----19---8--
Where T are temperatures in Kelvins
Figure 7. NTC resistance vs. temperature
NTC [kΩ]
AM17168v1
180
160
140
120
100
80
MAX.
60
CENTER
40
20
MIN.
0
-40 -20 0
20 40 60 80 100 120 140 (°C)
Figure 8. NTC resistance vs. temperature (zoom)
NTC [kΩ]
AM17169v1
1.8
1.6
1.4
1.2
1.0
0.8
MAX.
0.6
CENTER
0.4
MIN.
0.2
0.0
50 60 70 80 90 100 110 120 130 140 (°C)
DocID018533 Rev 4
11/20

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