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Número de pieza | 6MBI225U4-170 | |
Descripción | IGBT Module | |
Fabricantes | Fuji Electric | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 6MBI225U4-170 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! SPECIFICATION
Device Name : IGBT MODULE
Type Name
: 6MBI225U4-170
Spec. No. :
MS5F 6306
July 15 ’05 S.Miyashita
July 15 ’05 T.Miyasaka
K.Yamada
Y.Seki
MS5F6306
1
14
a
H04-004-07b
1 page 5. Thermal resistance characteristics
Items
Symbols
Conditions
Characteristics
min. typ. max.
Thermal resistance(1device)
Rth(j-c)
IGBT
FWD
- - 0.12
- - 0.20
Contact Thermal resistance
(1device) (*6)
Rth(c-f) with Thermal Compound
- 0.0167 -
(*6) This is the value which is defined mounting on the additional cooling fin with thermal compound.
Units
°C/W
6.Recommend way of module mounting to Heat sink Clamping
(1) Initial : 1/3 specified torque, sequence (1)→(2)→(3)→(4)→(5)→(6)→(7)→(8)
(2) Final :Full specified torque (3.5 Nm),sequence(4)→(3)→(2)→(1)→(8)→(7)→(6)→(5)
(7) (3) (1) (5)
(6) (2) (4) (8)
Mounting holes
Heat sink
Module
7. Indication on module
Logo of production
Lot.No.
6M BI 225U4-170
225A 1700V
Place of manufacturing (code)
8.Applicable category
This specification is applied to IGBT Module named 6MBI225U4-170 .
9.Storage and transportation notes
・ The module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75% .
・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface.
・ Avoid exposure to corrosive gases and dust.
・ Avoid excessive external force on the module.
・ Store modules with unprocessed terminals.
・ Do not drop or otherwise shock the modules when transporting.
MS5F6306
5
14
a
H04-004-03a
5 Page Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=2.2Ω, Tj= 25°C
10000
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=2.2Ω, Tj=125°C
10000
1000
100
ton 1000 toff
toff
tr
tf
100
ton
tr
tf
10
0
100 200 300
Collector current : Ic [A]
400
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=225A, VGE=±15V, Tj= 25°C
10000
1000
100
ton
toff
tr
tf
10
0.1
1.0 10.0
Gate resistance : RG [Ω]
100.0
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=225A, VGE=±15V, Tj= 125°C
250
Eon
200
150
Eoff
100
50 Err
0
0.1
1.0 10.0
Gate resistance : RG [Ω]
100.0
10
0
100 200 300
Collector current : Ic [A]
400
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=2.2Ω
125
100 Eoff(125°C)
75 Err(125°C)
Eon(125°C)
Eoff(25°C)
Err(25°C)
50 Eon(25°C)
25
0
0 50 100 150 200 250 300 350 400 450
Collector current : Ic [A]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 2.2Ω ,Tj <= 125°C
Stray inductance <= 100nH
600
500
400
300
200
100
0
0
500
1000
1500
Collector-Emitter voltage : VCE [V]
MS5F6306
11
14
a
H04-004-03a
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet 6MBI225U4-170.PDF ] |
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