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1MBI1004F-120L-50 PDF даташит

Спецификация 1MBI1004F-120L-50 изготовлена ​​​​«Fuji Electric» и имеет функцию, называемую «IGBT Module».

Детали детали

Номер произв 1MBI1004F-120L-50
Описание IGBT Module
Производители Fuji Electric
логотип Fuji Electric логотип 

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1MBI1004F-120L-50 Даташит, Описание, Даташиты
http://www.fujielectric.com/products/semiconductor/
1MBI100U4F-120L-50
IGBT MODULE (U series)
1200V / 100A / 1 in one package
IGBT Modules
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter DB for Motor Drive
AC and DC Servo Drive Amplifier (DB)
Active PFC
Industrial machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Conditions
Ic Continuous
Collector current
Ic pulse
-Ic
-Ic pulse
Collector power dissipation
Pc
Reverse voltage for FWD
VR
Forword current for FWD
IF
IF pulse
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
Screw torque
Mounting (*2)
Terminals (*3)
-
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value : 2.5 to 3.5 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5 to 3.5 Nm (M5)
1ms
1ms
1 device
Continuous
1ms
AC : 1min.
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Maximum ratings
1200
±20
150
100
300
200
50
100
540
1200
150
300
+150
-40~+125
2500
3.5
Units
V
V
A
W
V
A
°C
°C
VAC
Nm
1









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1MBI1004F-120L-50 Даташит, Описание, Даташиты
1MBI100U4F-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse Current
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip(*4)
Note *4: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
IR
VF
(terminal)
VF
(chip)
trr
R lead
Conditions
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 100mA
Tj=25°C
VGE = 15V
IC = 100A
Tj=125°C
Tj=25°C
Tj=125°C
VGE = 0V, VCE = 10V, f = 1MHz
VCC = 600V, IC = 100A
VGE = ±15V, RG = 5.6Ω
VGE = 0V
IF = 50A
VCE = 1200V
VGE = 0V
IF = 150A
IF = 150A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Items
Symbols Conditions
IGBT
Thermal resistance (1device)
Rth(j-c) Inverse Diode
FWD
Contact thermal resistance
Rth(c-f) with Thermal Compound (*5)
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 1.0
- - 200
4.5 6.5 8.5
- 2.05 2.20
- 2.25 -
- 1.90 2.05
- 2.10 -
- 11 -
- 0.32 1.20
- 0.10 0.60
- 0.03 -
- 0.41 1.00
- 0.07 0.30
- 1.70 2.00
- 1.80 -
- 1.60 1.85
- 1.70 -
- - 1.0
- 1.85 2.00
- 2.00 -
- 1.60 1.75
- 1.75 -
- - 0.35
- 1.39 -
Units
mA
nA
V
V
nF
µs
V
mA
V
µs
mΩ
Characteristics
min. typ. max.
- - 0.23
- - 0.73
- - 0.28
- 0.05 -
Units
°C/W
2









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1MBI1004F-120L-50 Даташит, Описание, Даташиты
1MBI100U4F-120L-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25oC / chip
250
200
VGE=20V 15V
12V
150
100 10V
50
0
0
1234
Collector-Emitter voltage : VCE [ V ]
8V
5
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
250
Tj=25oC Tj=125oC
200
150
100
50
0
01234
Collector-Emitter voltage : VCE [ V ]
5
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25°C
100.0
Cies
10.0
1.0 Cres
Coes
0.1
0
10 20
Collector-Emitter voltage : VCE [ V ]
30
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125oC / chip
250
200
VGE=20V 15V
12V
150
100 10V
50
0
0
8V
1234
Collector-Emitter voltage : VCE [ V ]
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25oC / chip
10
8
6
4
Ic=200A
2 Ic=100A
Ic=50A
0
5 10 15 20 25
Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=100A, Tj=25oC
VCE
VGE
0
0 200 400 600
Gate charge : Qg [ nC ]










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Номер в каталогеОписаниеПроизводители
1MBI1004F-120L-50IGBT ModuleFuji Electric
Fuji Electric

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