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7MBP300VEA060-50 PDF даташит

Спецификация 7MBP300VEA060-50 изготовлена ​​​​«Fuji Electric» и имеет функцию, называемую «IGBT Module».

Детали детали

Номер произв 7MBP300VEA060-50
Описание IGBT Module
Производители Fuji Electric
логотип Fuji Electric логотип 

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7MBP300VEA060-50 Даташит, Описание, Даташиты
http://www.fujielectric.com/products/semiconductor/
7MBP300VEA060-50
IGBT Modules
IGBT MODULE (V series)
600V / 300A / IPM
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (TC=25ºC, VCC=15V unless otherwise specified)
Items
Symbol
Min.
Max.
Units
Collector-Emitter Voltage (*1)
VCES
0 600 V
Short Circuit Voltage
VSC
200 400
V
DC IC
- 300 A
Collector Current
1ms
Icp
- 600 A
Duty=73.9% (*2) -IC
- 300 A
Collector Power Dissipation 1 device (*3)
PC
- 925 W
Collector Current
DC
1ms
IC
Icp
- 150 A
- 300 A
Forward Current of Diode
IF
- 150 A
Collector Power Dissipation 1 device (*3)
PC
- 625 W
Supply Voltage of Pre-Driver (*4)
VCC
-0.5 20
V
Input Signal Voltage (*5)
Vin
-0.5 VCC+0.5
V
Alarm Signal Voltage (*6)
VALM
-0.5
VCC
V
Alarm Signal Current (*7) IALM - 20 mA
Junction Temperature
Tj - 150 ºC
Operating Case Temperature
Topr
-20 110 ºC
Storage Temperature
Tstg -40 125 ºC
Solder Temperature (*8)
Tsol - 260 ºC
Isolating Voltage (*9)
Viso
-
AC2500
Vrms
Screw Torque
Terminal (M5)
Mounting (M5)
-
- 3.5 Nm
Note *1: VCES shall be applied to the input voltage between all Collector and Emitter. [ P1- (U, V, W ,B), P2- (U, V, W, B), (U ,V ,W ,B)-N1, (U, V, W, B)-N2 ]
Note *2: Duty=125ºC/Rth(j-c)D /(IF×VF Max.)×100
Note *3: PC=125ºC/Rth(j-c)Q (Inverter & Brake)
Note *4: VCC shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 14 and 13.
Note *5: Vin shall be applied to the input voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 15~18 and 13.
Note *6: VALM shall be applied to the voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 19 and 13.
Note *7: IALM shall be applied to the input current to terminal No.4, 8, 12 and 19.
Note *8: Immersion time 10±1 sec. 1 time.
Note *9: Terminal to base, 50/60Hz sine wave 1 min. All terminals should be connected together during the test.
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7MBP300VEA060-50 Даташит, Описание, Даташиты
7MBP300VEA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical Characteristics (Tj=25ºC, VCC=15V unless otherwise specified)
Items
Collector Current at off signal input
Collector-Emitter saturation voltage (*10)
Forward voltage of FWD (*10)
Collector Current at off signal input
Collector-Emitter saturation voltage (*10)
Forward voltage of FWD (*10)
Switching time
Symbol
ICES
VCE(sat)
VF
ICES
VCE(sat)
VF
ton
toff
trr
Conditions
VCE=600V
IC=300A
IF=300A
VCE=600V
IC=150A
IF=150A
Terminal
Chip
Terminal
Chip
Terminal
Chip
Terminal
Chip
VDC=300V, Tj=125ºC, IC=300A
VDC=300V, IF=300A
Supply current of P-side pre-driver (per one unit)
Supply current of N-side pre-driver
Iccp
Iccn
Switching Frequency= 0-15kHz
TC=-20~110ºC
Input signal threshold voltage
Vinth(on)
Vinth(off)
Vin-GND
ON
OFF
Over Current Protection
Level
Inverter
Brake
IOC Tj=125ºC
Over Current Protection Delay time
tdOC Tj=125ºC
Short Circuit Protection Delay time
tSC Tj=125ºC
IGBT Chips Over Heating Protection Temperature Level TjOH
Surface of IGBT Chips
Over Heating Protection Hysteresis
TjH
Under Voltage Protection Level
VUV
Under Voltage Protection Hysteresis
VH
Alarm Signal Hold Time
tALM(OC)
tALM(UV)
tALM(TjOH)
ALM-GND
TC=-20~110ºC
VCC 10V
Resistance for current limit
RALM
Note *10: The Max value is a case where it measures from P2- (U, V, W, B), (U, V, W, B)-N2.
Thermal Characteristics (TC = 25ºC)
Items
Junction to Case Thermal Resistance (*11)
Inverter
Brake
IGBT
FWD
IGBT
FWD
Case to Fin Thermal Resistance with Compound
Note *11: For 1device, the measurement point of the case is just under the chip.
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
Min.
-
-
-
-
-
Noise Immunity (VDC=300V, VCC=15V)
Items
Conditions
Common mode rectangular noise
Pulse width 1μs, polarity ±, 10 min.
Judge : no over-current, no miss operating
Min.
±2.0
Min.
-
-
-
-
-
-
-
-
-
-
1.1
-
-
-
-
1.2
1.5
450
225
-
-
150
-
11.0
0.2
1.0
2.5
5.0
960
Typ.
-
-
1.25
-
1.80
-
-
1.40
-
2.05
-
-
-
-
-
1.4
1.7
-
-
5
2
-
20
-
0.5
2.0
4.0
8.0
1265
Max.
1.0
1.90
-
2.45
-
1.0
1.85
-
2.55
-
-
2.1
0.3
36
127
1.6
1.9
-
-
-
3
-
-
12.5
-
2.4
4.9
11.0
1570
Units
mA
V
V
V
V
mA
V
V
V
V
µs
µs
µs
mA
mA
V
V
A
A
µs
µs
ºC
ºC
V
V
ms
ms
ms
Ω
Typ.
-
-
-
-
0.05
Max.
0.135
0.230
0.200
0.480
-
Units
°C/W
°C/W
°C/W
°C/W
°C/W
Typ.
-
Max.
-
Units
kV
Recommended Operating Conditions
Items
DC Bus Voltage
Power Supply Voltage of Pre-Driver
Symbol
VDC
VCC
Switching frequency of IPM
fSW
Arm shoot through blocking time for IPM's input signal tdead
Screw Torque (M5)
-
Weight
Items
Weight
Symbol
Wt
Min.
Typ.
Max.
Units
- - 400 V
13.5 15.0 16.5
V
- - 20 kHz
1.0 -
- µs
2.5 - 3.5 Nm
Min.
Typ.
Max.
Units
- 980 -
g
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7MBP300VEA060-50 Даташит, Описание, Даташиты
7MBP300VEA060-50
Block Diagram
VCCU
VinU
ALMU
GNDU
VCCV
VinV
ALM V
GNDV
VCCW
VinW
ALM W
GNDW
VCC
VinX
RALM
RALM
RALM
GND
VinY
VinZ
VinDB
ALM
RALM
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
P1
P2
U
V
W
Pre-Driver
Pre-Driver
Pre-Driver
B
N1
N2
Pre-drivers include following functions
1. Amplifier for driver
2. Short circuit protection
3. Under voltage lockout circuit
4. Over current protection
5. IGBT chip over heating protection
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Номер в каталогеОписаниеПроизводители
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ETC
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