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7MBR350UA120 PDF даташит

Спецификация 7MBR350UA120 изготовлена ​​​​«Fuji Electric» и имеет функцию, называемую «IGBT MODULE».

Детали детали

Номер произв 7MBR350UA120
Описание IGBT MODULE
Производители Fuji Electric
логотип Fuji Electric логотип 

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7MBR350UA120 Даташит, Описание, Даташиты
7MBR35UA120
IGBT MODULE (U series)
1200V / 35A / PIM
IGBT Modules
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbol
VCES
VGES
IC
ICP
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
-IC
-IC pulse
PC
VCES
VGES
IC
ICP
Collector power disspation
PC
Repetitive peak reverse voltage
VRRM
Repetitive peak reverse voltage
VRRM
Average output current
IO
Surge current (Non-Repetitive)
IFSM
I2t (Non-Repetitive)
I2t
Operating junction temperature
Tj
Storage temperature
Tstg
Isolation between terminal and copper base *2 Viso
voltage between thermistor and others *3
Mounting screw torque
Condition
Continuous
1ms
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
1ms
1 device
Continuous
1ms
1 device
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
Rating
1200
±20
35
25
70
50
35
70
160
1200
±20
25
15
50
30
115
1200
1600
35
260
338
+150
-40 to +125
AC 2500
AC 2500
3.5 *1
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Two thermistor terminals should be connected together, each other terminals should be
connected together and shorted to base plate when isolation test will be done.
Unit
V
V
A
W
V
V
A
W
V
V
A
A
A2s
°C
°C
V
N·m









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7MBR350UA120 Даташит, Описание, Даташиты
IGBT Module
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Condition
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
Thermal resistance Characteristics
Item
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
ICES
IGES
VCE(sat)
(terminal)
VCE(sat)
(chip)
ton
tr
toff
tf
IRRM
VFM
IRRM
R
B
VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=35mA
VGE=15V
Tj=25°C
Ic=35A
Tj=125°C
Tj=25°C
Tj=125°C
VGE=0V, VCE=10V, f=1MHz
VCC=600V
IC=35A
VGE=±15V
RG= 43
VGE= 0 V
Tj=25°C
IF=35A
Tj=125°C
Tj=25°C
Tj=125°C
IF=35A
VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
IC=25A
Tj=25°C
VGE=15V
Tj=125°C
Tj=25°C
Tj=125°C
VCC=600V
IC=25A
VGE=±15V
RG= 68
VR=1200V
IF=35 A
terminal
VGE=0V
chip
VR=1600V
T=25°C
T=100°C
T=25/50°C
Symbol
Condition
Inverter IGBT
Thermal resistance ( 1 device )
Rth(j-c)
Inverter FWD
Brake IGBT
Converter Diode
Contact thermal resistance *
Rth(c-f)
With thermal compound
* This is the value which is defined mounting on the additional cooling fin with thermal compound
7MBR35UA120
Characteristics
Min.
-
Typ.
-
Max.
1.0
- - 200
4.5 6.5 8.5
- 2.25 2.70
- 2.60 -
- 1.95 2.40
- 2.30 -
-3
-
- 0.53 1.20
- 0.43 0.60
- 0.03 -
- 0.37 1.00
- 0.07 0.30
- 2.05 2.40
- 2.20 -
- 1.75 2.10
- 1.90 -
- - 0.35
- - 1.0
- - 200
- 2.40 2.90
- 2.85 -
- 2.10 2.60
- 2.55 -
- 0.53 1.20
- 0.43 0.60
- 0.37 1.00
- 0.07 0.30
- - 1.0
- 1.35 1.70
- 1.25 -
- - 1.0
- 5000
-
465 495
520
3305
3375
3450
Unit
mA
nA
V
V
nF
µs
V
µs
mA
nA
V
µs
mA
V
mA
K
Min.
-
-
-
-
-
Characteristics
Typ.
Max.
- 0.76
- 1.19
- 1.07
- 0.90
0.05 -
Unit
°C/W
Equivalent Circuit Schematic
[Converter]
21(P)
[Brake]
22(P1)
[Inverter]
[Thermistor]
89
20(Gu)
18(Gv)
16(Gw)
1(R) 2(S) 3(T)
7(B)
19(Eu)
17(Ev)
4(U)
15(Ew)
5(V)
6(W)
23(N)
14(Gb)
24(N1)
13(Gx)
12(Gy)
11(Gz)
10(En)









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7MBR350UA120 Даташит, Описание, Даташиты
IGBT Module
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
60
VGE=20V 15V 12V
50
40
30 10V
20
10
0
0
8V
1234
Collector-Emitter voltage : VCE [V]
5
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
60
Tj=25°C
50
Tj=125°C
40
30
20
10
0
012345
Collector-Emitter voltage : VCE [V]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
10.0
Cies
7MBR35UA120
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
60
VGE=20V 15V
12V
50
40
30
10V
20
10
8V
0
012345
Collector-Emitter voltage : VCE [V]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
Ic=50A
2 Ic=25A
Ic= 12.5A
0
5 10 15 20 25
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=35A, Tj= 25°C
VGE
1.0
Coes
Cres
0.1
0
10 20
Collector-Emitter voltage : VCE [V]
30
0
0
VCE
30 60 90 120
Gate charge : Qg [ nC ]
150










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Номер в каталогеОписаниеПроизводители
7MBR350UA120IGBT MODULEFuji Electric
Fuji Electric

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