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BC848 PDF даташит

Спецификация BC848 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «General Purpose Transistors».

Детали детали

Номер произв BC848
Описание General Purpose Transistors
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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BC848 Даташит, Описание, Даташиты
BC846, BC847, BC848
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector-Emitter Voltage
BC846
BC847
BC848
VCEO
65
45
30
V
Collector-Base Voltage
BC846
BC847
BC848
VCBO
80
50
30
V
Emitter-Base Voltage
BC846
BC847
BC848
VEBO
6.0
6.0
5.0
V
Collector Current − Continuous
IC 100 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
PD
200 mW
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
620
−55 to
+150
°C/W
°C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
XX MG
G
XX = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 12 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 12
1
Publication Order Number:
BC846AWT1/D









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BC848 Даташит, Описание, Даташиты
BC846, BC847, BC848
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC846 Series V(BR)CEO 65
V
BC847 Series
45 −
BC848 Series
30 −
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846 Series V(BR)CES
80
V
BC847 Series
50 −
BC848 Series
30 −
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846 Series V(BR)CBO 80
V
BC847 Series
50 −
BC848 Series
30 −
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846 Series V(BR)EBO 6.0
V
BC847 Series
6.0 −
BC848 Series
5.0 −
Collector Cutoff Current (VCB = 30 V)
ON CHARACTERISTICS
(VCB = 30 V, TA = 150°C)
ICBO
− − 15 nA
− − 5.0 mA
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
hFE
− 90 −
− 150 −
− 270 −
(IC = 2.0 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
VCE(sat)
VBE(sat)
VBE(on)
fT
Cobo
NF
110 180 220
200 290 450
420 520 800
− − 0.25 V
− − 0.6
− 0.7 −
− 0.9 −
V
580 660 700 mV
− − 770
100 −
− MHz
− − 4.5 pF
− − 10 dB
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BC848 Даташит, Описание, Даташиты
300
150°C
200
25°C
100 −55°C
BC846, BC847, BC848
BC846A, BC847A, BC848A
VCE = 1 V
300
150°C
200
25°C
100 −55°C
VCE = 5 V
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
0.18
0.16
IC/IB = 20
0.14
1
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain vs. Collector
Current
1
150°C
0.12 25°C
0.10
0.08
0.06 −55°C
0.04
0.02
0
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
0.9 IC/IB = 20
−55°C
0.8 25°C
0.7
0.6 150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
1.2
1.1 VCE = 5 V
1.0
0.9
−55°C
0.8 25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.1 0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
Figure 5. Base Emitter Voltage vs. Collector
Current
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