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PDF BC846ALT1G Data sheet ( Hoja de datos )
| Número de pieza | BC846ALT1G | |
| Descripción | General Purpose Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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BC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: >4000 V
ESD Rating − Machine Model: >400 V
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector-Emitter Voltage
VCEO
Vdc
BC846
65
BC847, BC850
45
BC848, BC849
30
Collector−Base Voltage
VCBO
Vdc
BC846
80
BC847, BC850
50
BC848, BC849
30
Emitter−Base Voltage
VEBO
Vdc
BC846
6.0
BC847, BC850
6.0
BC848, BC849
5.0
Collector Current − Continuous
IC 100 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1)
TA = 25°C
Derate above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
RqJA
417 °C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
www.onsemi.com
1
BASE
COLLECTOR
3
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
XX M G
G
1
XX = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 14
1
Publication Order Number:
BC846ALT1/D
1 page  
BC846ALT1G Series
BC846B, SBC846B
600
500 150°C
VCE = 1 V
600
150°C
500
VCE = 5 V
400
25°C
300
400
25°C
300
200 −55°C
100
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 10. DC Current Gain vs. Collector
Current
1
0.30
0.25
IC/IB = 20
200 −55°C
100
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 11. DC Current Gain vs. Collector
Current
1
150°C
0.20
25°C
0.15
0.10
−55°C
0.05
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 12. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.0 IC/IB = 20
0.9
0.8
−55°C
25°C
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 13. Base Emitter Saturation Voltage vs.
Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9
−55°C
0.8
25°C
0.7
0.6 150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 14. Base Emitter Voltage vs. Collector
Current
www.onsemi.com
5
5 Page 
BC846ALT1G Series
11
100 mS 10 mS
1 mS
0.1 1 S
0.1
Thermal Limit
0.01
0.01
100 mS 10 mS
1 mS
1S
Thermal Limit
0.001
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 37. Safe Operating Area for
BC846A, BC846B
1
0.1
0.001
100 0.1
1
10 100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 38. Safe Operating Area for
BC847A, BC847B, BC847C, BC850B, BC850C
100 mS 10 mS
1 mS
1S
Thermal Limit
0.01
0.001
0.1
1
10 100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 39. Safe Operating Area for
BC848A, BC848B, BC848C, BC849B, BC849C
www.onsemi.com
11
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| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BC846ALT1G.PDF ] | |
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