NSVBC847BDW1T2G PDF даташит
Спецификация NSVBC847BDW1T2G изготовлена «ON Semiconductor» и имеет функцию, называемую «Dual General Purpose Transistors». |
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Детали детали
Номер произв | NSVBC847BDW1T2G |
Описание | Dual General Purpose Transistors |
Производители | ON Semiconductor |
логотип |
11 Pages
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BC846BDW1T1G,
SBC846BDW1T1G,
BC847BDW1T1G,
SBC847BDW1T1G Series,
NSVBC847BDW1T2G,
BC848CDW1T1G
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
• S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol BC846 BC847 BC848 Unit
Collector −Emitter Voltage
VCEO
65
45
30
V
Collector −Base Voltage
VCBO
80
50
30
V
Emitter −Base Voltage
VEBO
6.0
6.0
5.0
V
Collector Current −
Continuous
IC 100 100 100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation Per Device
FR−5 Board (Note 1)
TA = 25°C
Derate Above 25°C
PD
380 mW
250 mW/°C
3.0 mW/°C
Thermal Resistance,
Junction to Ambient
RqJA
°C/W
328
Junction and Storage Temperature
Range
TJ, Tstg − 55 to +150
°C
1. FR−5 = 1.0 x 0.75 x 0.062 in
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SOT−363
CASE 419B
STYLE 1
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
MARKING DIAGRAM
6
1x MG
G
1
1x = Specific Device Code
x = B, F, G, L
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 9
1
Publication Order Number:
BC846BDW1T1/D
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BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
V(BR)CEO
V
65 −
45 −
30 −
−
−
−
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
V(BR)CES
V
80 −
50 −
30 −
−
−
−
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
V(BR)CBO
V
80 −
50 −
30 −
−
−
−
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
V(BR)EBO
V
6.0 −
6.0 −
5.0 −
−
−
−
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
ICBO
−
−
− 15 nA
− 5.0 mA
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846B, SBC846B, BC847B, SBC847B, NSVBC847
BC847C, SBC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V)
BC846B, SBC846B, BC847B, SBC847B, NSVBC847
BC847C, SBC847C, BC848C
hFE
− 150 −
− 270 −
200 290 450
420 520 800
−
Collector −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base −Emitter Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
VCE(sat)
−
−
V
− 0.25
− 0.6
VBE(sat)
− 0.7 −
− 0.9 −
V
VBE(on)
mV
580 660 700
− − 770
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100 −
MHz
−
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo
−
pF
− 4.5
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
NF
−
dB
− 10
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BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
TYPICAL CHARACTERISTICS − BC846BDW1T1G, SBC846BDW1T1G
600
500
150°C
400
VCE = 5 V
300 25°C
200 −55°C
100
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain at VCE = 5 V
1
600
500
150°C
400
300 25°C
VCE = 10 V
200 −55°C
100
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain at VCE = 10 V
1
0.25
0.20
IC/IB = 10
0.15
0.10
0.05
0.00
0.0001
25°C
150°C
−55°C
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 3. VCE(sat) at IC/IB = 10
0.3
0.25
IC/IB = 20
0.2
0.15
0.1
25°C
150°C
0.05
0
0.1 0.0001
−55°C
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 4. VCE(sat) at IC/IB = 20
1.10
1.00
0.90
IC/IB = 10
−55°C
0.80 25°C
0.70
0.60 150°C
0.50
0.40
0.30
0.20
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 5. VBE(sat) at IC/IB = 10
1.10
1.00
IC/IB = 20
0.90
0.80 −55°C
0.70 25°C
0.60
0.50
0.40 150°C
0.30
0.20
0.1 0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 6. VBE(sat) at IC/IB = 20
http://onsemi.com
3
0.1
0.1
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NSVBC847BDW1T2G | Dual General Purpose Transistors | ON Semiconductor |
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