SBC847 PDF даташит
Спецификация SBC847 изготовлена «ON Semiconductor» и имеет функцию, называемую «General Purpose Transistors». |
|
Детали детали
Номер произв | SBC847 |
Описание | General Purpose Transistors |
Производители | ON Semiconductor |
логотип |
13 Pages
No Preview Available ! |
BC846, SBC846, BC847,
SBC847, BC848 Series
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector-Emitter Voltage
BC846, SBC846
BC847, SBC847
BC848
VCEO
65
45
30
V
Collector-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
VCBO
80
50
30
V
Emitter-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
VEBO
6.0
6.0
5.0
V
Collector Current − Continuous
IC 100 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
PD
RqJA
TJ, Tstg
200
620
−55 to
+150
mW
°C/W
°C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
3
1
2
SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
XX MG
G
XX = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 12 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 11
1
Publication Order Number:
BC846AWT1/D
No Preview Available ! |
BC846, SBC846, BC847, SBC847, BC848 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series V(BR)CEO 65
−
−
V
BC847, SBC847 Series
45 −
−
BC848 Series
30 −
−
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846, SBC846 Series V(BR)CES
80
−
−
V
BC847, SBC847 Series
50 −
−
BC848 Series
30 −
−
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series V(BR)CBO 80
−
−
V
BC847, SBC847 Series
50 −
−
BC848 Series
30 −
−
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846, SBC846 Series V(BR)EBO 6.0
−
−
V
BC847, SBC847 Series
6.0 −
−
BC848 Series
5.0 −
−
Collector Cutoff Current (VCB = 30 V)
ON CHARACTERISTICS
(VCB = 30 V, TA = 150°C)
ICBO
− − 15 nA
− − 5.0 mA
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846A, BC847A, SBC847A, BC848A
BC846B, SBC846B, BC847B, SBC847B, BC848B
BC847C, SBC847C, BC848C
hFE
− 90 −
− 150 −
− 270 −
−
(IC = 2.0 mA, VCE = 5.0 V)
BC846A, BC847A, SBC847A, BC848A
BC846B, SBC846B, BC847B, SBC847B, BC848B
BC847C, SBC847C, BC848C
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
VCE(sat)
VBE(sat)
VBE(on)
fT
Cobo
NF
110 180 220
200 290 450
420 520 800
− − 0.25 V
− − 0.6
− 0.7 −
− 0.9 −
V
580 660 700 mV
− − 770
100 −
− MHz
− − 4.5 pF
− − 10 dB
www.onsemi.com
2
No Preview Available ! |
300
150°C
200
25°C
100 −55°C
BC846, SBC846, BC847, SBC847, BC848 Series
BC846A, BC847A, SBC847A, BC848A
VCE = 1 V
300
150°C
200
25°C
100 −55°C
VCE = 5 V
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
0.18
0.16
IC/IB = 20
0.14
1
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain vs. Collector
Current
1
150°C
0.12 25°C
0.10
0.08
0.06 −55°C
0.04
0.02
0
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
0.9 IC/IB = 20
−55°C
0.8 25°C
0.7
0.6 150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
1.2
1.1 VCE = 5 V
1.0
0.9
−55°C
0.8 25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.1 0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
Figure 5. Base Emitter Voltage vs. Collector
Current
www.onsemi.com
3
Скачать PDF:
[ SBC847.PDF Даташит ]
Номер в каталоге | Описание | Производители |
SBC846 | General Purpose Transistors | ON Semiconductor |
SBC846ALT1G | General Purpose Transistors | ON Semiconductor |
SBC846BDW1T1G | Dual General Purpose Transistors | ON Semiconductor |
SBC847 | General Purpose Transistors | ON Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |