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Número de pieza | 2MBI150U4B-120-50 | |
Descripción | IGBT MODULE | |
Fabricantes | Fuji | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2MBI150U4B-120-50 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! SPECIFICATION
Device Name
Type Name
: IGBT MODULE
(RoHS compliant product)
: 2MBI150U4B-120-50
Spec. No. : MS5F6568
Apr. 21 ’06 K.Muramatsu
Apr. 21 ’06 M.W atanabe T.Miyasaka
K.Yamada
MS5F6568
1a
14
H04-004-07b
1 page 5. Thermal resistance characteristics
Items
Sym b o l s
Conditions
Characteristics
min. typ. max.
Thermal resistance(1device) Rth(j-c)
IGBT
FWD
- - 0.16
- - 0.24
Contact Thermal resistance
(1 device) (*4)
Rth(c-f)
with Thermal Compound
- 0.025 -
(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.
Un i t s
oC/W
6. Indication on module
Logo of production
L o t .No .
2MBI150U4B-120-50
150A 1200V
Place of manufacturing (code)
7. Applicable category
This specification is applied to IGBT-Module named 2MBI150U4B-120-50.
8. Storage and transportation notes
• The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% .
• Store modules in a place with few temperature changes in order to avoid condensation on the
module surface.
• Avoid exposure to corrosive gases and dust.
• Avoid excessive external force on the module.
• Store modules with unprocessed terminals.
• Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
L
RG
V GE
V CE
Ic
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
0V
V GE
VCE
V cc
0V Ic
0A
90%
tr r
90%
Ir r Ic
10% 10%
tr ( i )
tr
to n
VCE
to f f
0V
90%
10%
tf
MS5F6568
5a
14
H04-004-03a
5 Page Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=4.7Ω, Tj=25oC
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=4.7Ω, Tj=125oC
10000
1000
100
toff
ton
tr
tf
10
0
50 100 150 200 250
Collector current : Ic [ A ]
300
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=150A, VGE=±15V, Tj=25oC
10000
1000
100
ton
toff
tr
tf
10
1
10 100
Gate resistance : RG [ Ω ]
1000
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=150A, VGE=±15V, Tj=125oC
40
Eon
30
20 Eoff
10
0
1
Err
10 100
Gate resistance : RG [ Ω ]
1000
1000
100
ton
toff
tr
tf
10
0
50 100 150 200 250 300
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=4.7Ω
25
20 Eoff(125oC)
Eon(125oC)
15 Err(125oC)
Eoff(25oC)
10 Eon(25oC)
Err(25oC)
5
0
0 50 100 150 200 250 300
Collector current : Ic [ A ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 4.7Ω, Tj <= 125oC
400
300
200
100
0
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]
MS5F6568
11 a
14
H04-004-03a
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet 2MBI150U4B-120-50.PDF ] |
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