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PDF APM4435 Data sheet ( Hoja de datos )
| Número de pieza | APM4435 | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Anpec Electronics Coropration | |
| Logotipo |  |
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APM4435
P-Channel Enhancement Mode MOSFET
Features
Pin Description
• -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V
RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V
• Super High Density Cell Design
• Reliable and Rugged
• SO-8 Package
Applications
S1
S2
S3
G4
8D
7D
6D
5D
SO − 8
S SS
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G
Ordering and Marking Information
DD DD
P-Channel MOSFET
APM 4435
APM 4435
H a n d lin g C o d e
Temp. Range
Package Code
APM 4435
XXXXX
Package Code
K : SO -8
O peration Junction Tem p. R ange
C : -55 to 125°C
H andling C ode
TU : Tube
TR : Tape & Reel
XXX XX - D ate Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
TA = 25°C
Rating
-30
±25
-8
-50
Unit
V
A
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2001
1
www.anpec.com.tw
1 page  
APM4435
Typical Characteristics
Source-Drain Diode Forward Voltage
30
10
TJ=150°C
TJ=25°C
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD-Source-to-Drain Voltage (V )
100
80
60
40
20
0
0.01
Single Pulse Power
0.1 1
Time (sec)
10
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle = 0.5
D= 0.2
D= 0.1
0.1
D= 0.05
D= 0.02
0.01
1E-4
1E-3
SINGLE PULSE
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=80°C/W
3.TJM-TA=PDMZthJA
4.Surface Mounted
0.01 0.1
1
Square Wave Pulse Duration (sec)
10
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2001
5
www.anpec.com.tw
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet APM4435.PDF ] | |
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