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Número de pieza | STI14NM50N | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STI14NM50N (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
No Preview Available ! STF14NM50N, STI14NM50N,
STP14NM50N
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFETs
in TO-220FP, I²PAK and TO-220 packages
Datasheet - production data
Features
3
2
1
TO-220FP
TAB TAB
I2PAK 1 2 3
TO-220
3
2
1
Figure 1. Internal schematic diagram
'7$%
*
6
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Order codes
STF14NM50N
STI14NM50N
STP14NM50N
VDS @
TJmax
RDS(on)
max
ID
550 V
0.32 Ω 12 A
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
Description
These devices are N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Order codes
STF14NM50N
STI14NM50N
STP14NM50N
Table 1. Device summary
Marking
Package
14NM50N
TO-220FP
I2PAK
TO-220
Packaging
Tube
June 2014
This is information on a product in full production.
DocID16832 Rev 7
1/18
www.st.com
18
1 page STF14NM50N, STI14NM50N, STP14NM50N
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 12 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 A/µs,
VDD = 60 V
(see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 A/µs,
VDD = 60 V, TJ = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
12 A
48 A
1.6 V
252 ns
2.8 µC
22 A
300 ns
3.3 µC
22.2 A
DocID16832 Rev 7
5/18
5 Page STF14NM50N, STI14NM50N, STP14NM50N
Package mechanical data
4.1 TO-220FP, STF14NM50N
Figure 21. TO-220FP drawing
DocID16832 Rev 7
7012510_Rev_K_B
11/18
11 Page |
Páginas | Total 18 Páginas | |
PDF Descargar | [ Datasheet STI14NM50N.PDF ] |
Número de pieza | Descripción | Fabricantes |
STI14NM50N | N-channel Power MOSFET | STMicroelectronics |
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