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B60NH02L PDF даташит

Спецификация B60NH02L изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «STB60NH02L».

Детали детали

Номер произв B60NH02L
Описание STB60NH02L
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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B60NH02L Даташит, Описание, Даташиты
STB60NH02L
N-CHANNEL 24V - 0.0085 - 60A D²PAK
STripFET™ III POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB60NH02L
24 V < 0.0105 60 A
TYPICAL RDS(on) = 0.0085 @ 10 V
TYPICAL RDS(on) = 0.012 @ 5 V
)RDS(ON) * Qg INDUSTRY’s BENCHMARK
t(sCONDUCTION LOSSES REDUCED
cSWITCHING LOSSES REDUCED
uLOW THRESHOLD DEVICE
rodSURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
PIN TAPE & REEL (SUFFIX “T4”)
leteDESCRIPTION
oThe STB60NH02L utilizes the latest advanced design
srules of ST’s proprietary STripFET™ technology. This is
bsuitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
) - OAPPLICATIONS
t(sSPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
3
1
D2PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
te ProducOrdering Information
leSALES TYPE
oSTB60NH02LT4
MARKING
B60NH02L
ObsABSOLUTE MAXIMUM RATINGS
PACKAGE
TO-263
PACKAGING
TAPE & REEL
Symbol
Parameter
Value
Unit
Vspike(1) Drain-source Voltage Rating
30 V
VDS Drain-source Voltage (VGS = 0)
24 V
VDGR
Drain-gate Voltage (RGS = 20 k)
24 V
VGS Gate- source Voltage
± 20
V
ID Drain Current (continuous) at TC = 25°C
60
A
ID Drain Current (continuous) at TC = 100°C
43
A
IDM(2)
Drain Current (pulsed)
240 A
Ptot Total Dissipation at TC = 25°C
70 W
Derating Factor
0.47 W/°C
EAS (3) Single Pulse Avalanche Energy
280 mJ
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
-55 to 175
°C
May 2004
1/11









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B60NH02L Даташит, Описание, Даташиты
STB60NH02L
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
2.14
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage
ID = 25 mA, VGS = 0
24
V
IDSS
Zero Gate Voltage
VDS = 20 V
1 µA
t(s)IGSS
Drain Current (VGS = 0)
Gate-body Leakage
Current (VDS = 0)
VDS = 20 V TC = 125°C
VGS = ± 20V
10
±100
µA
nA
ucON (4)
rodSymbol
PVGS(th)
leteRDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
VGS = 5 V
ID = 30 A
ID = 15 A
Min.
1
Typ. Max.
1.8 2.5
0.0085 0.0105
0.012 0.020
Unit
V
bsoDYNAMIC
OSymbol
-gfs (4)
t(s)Ciss
cCoss
uCrss
Obsolete ProdRG
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance
Test Conditions
VDS = 15 V
ID = 25 A
VDS = 15V f = 1 MHz VGS = 0
Min.
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
Typ.
27
1400
400
55
Max.
1
Unit
S
pF
pF
pF
2/11









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B60NH02L Даташит, Описание, Даташиты
STB60NH02L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 10 V
ID = 30 A
RG = 4.7
VGS = 10 V
(Resistive Load, Figure 3)
10
130
ns
ns
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD= 10 V ID= 60 A VGS= 10 V
24 32 nC
5 nC
3.4 nC
Qoss(5) Output Charge
VDS= 16 V
VGS= 0 V
9.4
nC
)SWITCHING OFF
t(sSymbol
Parameter
uctd(off)
rodtf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 10 V
ID = 30 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
Min.
Typ.
27
16
Max.
21.6
Unit
ns
ns
PSOURCE DRAIN DIODE
teSymbol
Parameter
Test Conditions
Min. Typ. Max.
oleISD
sISDM
Source-drain Current
Source-drain Current (pulsed)
60
240
ObVSD (4) Forward On Voltage
ISD = 30 A
VGS = 0
1.3
-trr
t(s)Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
c(1) Garanted when external Rg=4.7 and tf < tfmax.
u(2) Pulse width limited by safe operating area
d(3) Starting Tj = 25 oC, ID = 25A, VDD = 15V
.
ro.
ISD = 60 A
di/dt = 100A/µs
VDD = 18 V
Tj = 150°C
(see test circuit, Figure 5)
36 48
36 48
2
(4) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(5) Qoss = Coss*Vin , Coss = Cgd + Cds . See Appendix A
Unit
A
A
V
ns
nC
A
Obsolete PSafe Operating Area
Thermal Impedance
3/11










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Номер в каталогеОписаниеПроизводители
B60NH02LSTB60NH02LSTMicroelectronics
STMicroelectronics

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