LMZ10500 PDF даташит
Спецификация LMZ10500 изготовлена «National Semiconductor» и имеет функцию, называемую «650mA SIMPLE SWITCHER Nano Module». |
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Детали детали
Номер произв | LMZ10500 |
Описание | 650mA SIMPLE SWITCHER Nano Module |
Производители | National Semiconductor |
логотип |
20 Pages
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LMZ10500
October 5, 2011
650mA SIMPLE SWITCHER® Nano Module with 5.5V
Maximum Input Voltage
8 Pin LLP-Footprint Package
System Performance
(Quick Overview Links: VOUT = 1.2V, 1.8V, 2.5V, 3.3V)
SE08A 8 Pin Package
30161631
3.0 x 2.5 x 1.2 mm (0.118 x 0.098 x 0.047 in)
RoHS Compliant
Electrical Specifications
■ Up to 650mA output current
■ Input voltage range 2.7V to 5.5V
■ Output voltage range 0.6V to 3.6V
■ Efficiency up to 95%
Key Features
■ Integrated inductor
■ Miniature form factor (3.0 mm x 2.5 mm x 1.2 mm)
■ 8-pin LLP footprint
■ -40°C to 125°C junction temperature range
■ Adjustable output voltage
■ 2.0MHz fixed PWM switching frequency
■ Integrated compensation
■ Soft start function
■ Current limit protection
■ Thermal shutdown protection
■ Input voltage UVLO for power-up, power-down, and
brown-out conditions
■ Only 5 external components — resistor divider and 3
ceramic capacitors
Applications
■ Point of load conversions from 3.3V and 5V rails
■ Space constrained applications
■ Low output noise applications
Performance Benefits
■ Small solution size
■ Low output voltage ripple
■ Easy component selection and simple PCB layout
■ High efficiency reduces system heat generation
© 2011 National Semiconductor Corporation 301616
Typical Efficiency at VIN = 3.6V
100
90
80
70
60
50 VOUT = 1.2V
40
VOUT = 1.8V
VOUT = 2.5V
VOUT = 3.3V
30
20
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
LOAD CURRENT (A)
30161630
Output Voltage Ripple
VIN = 5.0V, VOUT = 1.8V, IOUT = 650mA
30161633
Radiated EMI (CISPR22)
VIN = 5.0V, VOUT = 1.8V, IOUT = 650mA
80 Emissions
70
CISPR 22 Class B Limit
CISPR 22 Class A Limit
60
50
40
30
20
10
0
0 200 400 600 800 1000
FREQUENCY (MHz)
30161632
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Connection Diagram
NS Package Number SE08A
30161620
Order Information
Order Number
LMZ10500SEE
LMZ10500SE
LMZ10500SEX
Package Marking (Note)
XVS SX
XVS SX
XVS SX
Supplied As
250 units, Tape-and-Reel
1000 units, Tape-and-Reel
3000 units, Tape-and-Reel
Note: The actual physical placement of the package marking will vary from part to part. The package marking “X” designates the date code. “V” is a NSC internal
code for die traceability. Both will vary in production. “S” designates device type as switcher and “SX” identifies the device (part number).
Pin Descriptions
Pin #
1
2
3
4
5
6
7
8
Name
EN
VCON
FB
SGND
VOUT
PGND
VIN
VREF
PAD
Description
Enable Input. Set this digital input higher than 1.2V for normal operation. For shutdown, set low. Pin is
internally pulled up to VIN and can be left floating for always-on operation.
Output voltage control pin. Connect to analog voltage from resisitve divider or DAC/controller to set the
VOUT voltage. VOUT = 2.5 x VCON. Connect a small (470pF) capacitor from this pin to SGND to provide
noise filtering.
Feedback of the error amplifier. Connect directly to output capacitor to sense VOUT.
Ground for analog and control circuitry. Connect to PGND at a single point.
Output Voltage. Connected to one terminal of the integrated inductor. Connect output filter capacitor
between VOUT and PGND.
Power ground for the power MOSFETs and gate-drive circuitry.
Voltage supply input. Connect ceramic capacitor between VIN and PGND as close as possible to these
two pins. Typical capacitor values are between 4.7µF and 22µF.
2.35V voltage reference output. Typically connected to VCON pin through a resistive divider to set the
output voltage.
The 3 pads underneath the module are not internally connected to any node. These pads should be
connected to the ground plane for improved thermal performance.
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
VIN, VREF to SGND
PGND to SGND
EN, FB, VCON
VOUT
Junction Temperature (TJ-MAX)
Storage Temperature Range
Maximum Lead Temperature
ESD Susceptibility(Note 2)
−0.2V to +6.0V
−0.2V to +0.2V
(SGND −0.2V)
to (VIN +0.2V)
w/6.0V max
(PGND −0.2V)
to (VIN +0.2V)
w/6.0V max
+150°C
−65°C to +150°C
+260°C
±2kV
Operating Ratings (Note 1)
Input Voltage Range
Recommended Load Current
Junction Temperature (TJ) Range
2.7V to 5.5V
0 mA to 650mA
−40°C to +125°C
Thermal Properties
Junction-to-Ambient Thermal
Resistance (θJA), SE08A Package
(Note 3)
120°C/W
Electrical Characteristics (Note 4) Specifications with standard typeface are for TJ = 25°C only; Limits in bold
face type apply over the operating junction temperature range TJ of -40°C to 125°C. Minimum and maximum limits are guaranteed
through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are
provided for reference purposes only. Unless otherwise stated the following conditions apply: VIN = 3.6V, VEN = 1.2V.
Symbol
Parameter
Conditions
Min Typ
Max
(Note 4) (Note 5) (Note 4)
Units
SYSTEM PARAMETERS
VREF x GAIN
Reference voltage x VCON to VIN = VEN = 5.5V, VCON = 1.44V
FB Gain
5.7575
5.875
5.9925
V
GAIN
VINUVLO
VINUVLO
ISHDN
VCON to FB Gain
VIN rising threshold
VIN falling theshold
Shutdown supply current
VIN = 5.5V, VCON = 1.44V
VIN = 3.6V, VEN = 0.5V
(Note 6)
2.4375
2.5
2.4
2.25
11
2.5750
18
V/V
V
V
µA
Iq
RDROPOUT
I LIM
DC bias current into VIN
VIN to VOUTresistance
DC Output Current Limit
VIN = 5.5V, VCON = 1.6V, IOUT = 0A
IOUT = 200 mA
VCON = 0.24V
(Note 7)
800
6.5
285
1000
8.5
425
mA
mΩ
mA
FOSC
VIH,ENABLE
VIL,ENABLE
TSD
TSD-HYST
DMAX
TON-MIN
θJA
Internal oscillator frequency
Enable logic HIGH voltage
Enable logic LOW voltage
Thermal shutdown
Rising Threshold
Thermal shutdown hysteresis
Maximum duty cycle
Minimum on-time
Package Thermal Resistance 20mm x 20mm board
2 layers, 2 oz copper, 0.5W, no
airlow
1.75
1.2
2.0
150
20
100
50
118
2.25
0.5
MHz
V
V
°C
°C
%
ns
15mm x 15mm board
2 layers, 2 oz copper, 0.5W, no
airlow
132
°C/W
10mm x 10mm board
2 layers, 2 oz copper, 0.5W, no
airlow
157
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