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PDF SS8550 Data sheet ( Hoja de datos )
| Número de pieza | SS8550 | |
| Descripción | PNP Transistor | |
| Fabricantes | TGS | |
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TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
SS8550 TRANSISTOR (PNP)
TO-92
FEATURES
Power dissipation
PC : 1 W (Ta=25 ℃)
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
-40 V
VCEO
Collector-Emitter Voltage
-25 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous -1.5 A
Tj Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-100uA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=-0.1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA, IC=0
Collector cut-off current
ICBO
VCB=-40V, IE=0
Emitter cut-off current
ICEO
VCE=-20V, IE=0
Emitter cut-off current
IEBO VEB=-5V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
Collector-emitter saturation voltage
VCE(sat) IC=-800mA, IB=-80mA
Base-emitter saturation voltage
VBE(sat) IC=-800mA, IB=-80mA
Base-emitter voltage
VBE(on) VCE=-1V, IC=-10mA
Out capacitance
Cob VCB=-10V, IE=0mA,f=1MHZ
Transition frequency
fT VCE=-10V, IC=-50mA,f=30MHZ
Min Typ Max Unit
-40 V
-25 V
-5 V
-0.1 μA
-0.1 μA
-0.1 uA
85 400
40
-0.5 V
-1.2 V
-1 V
20 pF
100 MHz
CLASSIFICATION OF hFE(2)
Rank
Range
B
85-160
C
120-200
D
160-300
D3
300-400
B,Sep,2011
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SS8550.PDF ] | |
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