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C5358 PDF даташит

Спецификация C5358 изготовлена ​​​​«Toshiba» и имеет функцию, называемую «NPN Transistor - 2SC5358».

Детали детали

Номер произв C5358
Описание NPN Transistor - 2SC5358
Производители Toshiba
логотип Toshiba логотип 

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C5358 Даташит, Описание, Даташиты
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5358
Power Amplifier Applications
2SC5358
Unit: mm
High breakdown voltage: VCEO = 230 V
Complementary to 2SA1986
Suitable for use in 80-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
230
230
5
15
1.5
150
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-16C1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 4.7 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10









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C5358 Даташит, Описание, Даташиты
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 230 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
hFE (2)
VCE (sat)
VCE = 5 V, IC = 7 A
IC = 8 A, IB = 0.8 A
VBE VCE = 5 V, IC = 7 A
fT VCE = 5 V, IC = 1 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Marking
2SC5358
Min Typ. Max Unit
― ― 5.0 μA
― ― 5.0 μA
230
V
55 160
35 87
0.4 3.0
V
1.0 1.5
V
30 MHz
200
pF
TOSHIBA
C5358
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-10









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C5358 Даташит, Описание, Даташиты
IC – VCE
20
Common emitter
Tc = 25°C
16 800
600
400
300
12 250
200
150
8 100
IB = 10 mA 50
4 40
30
20
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE (sat) – IC
3
1
0.3
0.1 25
0.03
0.01
0.01
Tc = 100°C
25
Common emitter
IC/IB = 10
0.1 1
10 100
Collector current IC (A)
2SC5358
IC – VBE
20
Common emitter
VCE = 5 V
16
12
Tc = 100°C
8
4
25
25
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
hFE – IC
300
Tc = 100°C
100
25
30 25
10
3 Common emitter
VCE = 5 V
1
0.01
0.1
1
10
Collector current IC (A)
100
Safe Operating Area
100
IC max (pulsed)*
30
IC max (continuous)
10
3
1 ms*
10 ms*
100 ms*
DC operation
1 Tc = 25°C
0.3
0.1 *: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
0.03 linearly with increase in
temperature.
0.01
1 3 10 30 100
VCEO max
300 1000 3000
Collector-emitter voltage VCE (V)
3
2006-11-10










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