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2SAR573D PDF даташит

Спецификация 2SAR573D изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «PNP -3.0A -50V Middle Power Transistor».

Детали детали

Номер произв 2SAR573D
Описание PNP -3.0A -50V Middle Power Transistor
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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2SAR573D Даташит, Описание, Даташиты
2SAR573D
PNP -3.0A -50V Middle Power Transistor
Parameter
VCEO
IC
Value
-50V
-3A
lFeatures
1) Suitable for Middle Power Driver.
2) Complementary NPN Types : 2SCR573D.
3) Low VCE(sat)
  VCE(sat)=-0.40V(Max.).
  (IC/IB=-1A/-50mA)
4) Lead Free/Rohs Compliant
lOutline
CPT
 
 
2SAR573D
 
              
lInner circuit
Datasheet
 
 
B: BASE
C: COLLECTOR
E: EMITTER
lApplication
Motor driver,LED driver
Power supply
lPackaging specifications
Part No.
Package
Package
size
2SAR573D
CPT 6595
                      
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
TL 330 16
2500 AR573
                                                                                        
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/6
20131120 - Rev.001









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2SAR573D Даташит, Описание, Даташиты
2SAR573D
          
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Power dissipation
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCBO
VCEO
VEBO
IC
ICP*1
IB
PD*2
Tj
Tstg
Values
-50
-50
-6
-3
-6
-0.8
10
150
-55 to +150
Unit
V
V
V
A
A
A
W
lElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Symbol
Conditions
BVCBO IC = -100μA
BVCEO IC = -1mA
BVEBO
ICBO
IEBO
VCE(sat)
hFE
f
*3
T
IE = -100μA
VCB = -50V
VEB = -4V
IC = -1A, IB = -50mA
VCE = -3V, IC = -100mA
VCE = -10V, IE = 200mA,
f = 100MHz
Min.
-50
-50
-6
-
-
-
180
-
Values
Typ.
-
-
-
-
-
-200
-
300
Max.
-
-
-
-1
-1
-400
450
-
Output capacitance
Cob
VCB = -10V, IE = 0A,
f = 1MHz
- 35 -
Turn-On time
Storage time
Fall time
ton*4 IC = -1.5A, VCC = -10V
-
50
-
tstg*4 IB1 = -150mA
- 450 -
tf*4 IB2 = 150mA
- 100 -
*1 Pw=10ms 1PULSE
*2 Tc=25
*3 PULSED
*4 SEE SWITCHING TIME TEST CIRCUIT
Unit
V
V
V
μA
μA
mV
-
MHz
pF
ns
ns
ns
                                            
 
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/6
                                        
20131120 - Rev.001









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2SAR573D Даташит, Описание, Даташиты
2SAR573D
lElectrical characteristic curves(Ta = 25°C)
      Datasheet
Fig.1 Grounded Emitter Propagation Characteristics
Fig.2 Typical Output Characteristics
Fig.3 DC Current Gain vs. Collector Current(I)
Fig.4 DC Current Gain vs. Collector Current(II)
                                                                                          
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
3/6
20131120 - Rev.001










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