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2SAR542F3 PDF даташит

Спецификация 2SAR542F3 изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «PNP -3.0A -30V Middle Power Transistor».

Детали детали

Номер произв 2SAR542F3
Описание PNP -3.0A -30V Middle Power Transistor
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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2SAR542F3 Даташит, Описание, Даташиты
2SAR542F3
PNP -3.0A -30V Middle Power Transistor
Parameter
VCEO
IC
Value
-30V
-3A
lFeatures
1) Suitable for Middle Power Driver.
2) Low VCE(sat)
  VCE(sat)=-0.20V(Max.).
  (IC/IB=-1A/-50mA)
3) High collector current.
  IC=-3A(max),ICP=-6A(max)
4) Leadless small SMD package (HUML2020L3)
  Excellent thermal and electrical conductivity.
5) Lead Free/Rohs Compliant.
lOutline
HUML2020L3
 
2SAR542F3
 
              
lInner circuit
B: BASE
C: COLLECTOR
E: EMITTER
Datasheet
 
 
lApplication
Motor driver,LED driver
Power supply
lPackaging specifications
Part No.
Package
Package
size
2SAR542F3 HUML2020L3 2020
                      
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
TR 180
8
3000
MQ
                                                                                        
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/6
20140128 - Rev.001









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2SAR542F3 Даташит, Описание, Даташиты
2SAR542F3
          
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Power dissipation
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCBO
VCEO
VEBO
IC
ICP*1
IB
PD*2
PD*3
Tj
Tstg
Values
-30
-30
-6
-3
-6
-500
1.0
2.1
150
-55 to +150
Unit
V
V
V
A
A
mA
W
W
lElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Symbol
Conditions
BVCBO IC = -100μA
BVCEO IC = -1mA
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
IE = -100μA
VCB = -30V
VEB = -4V
IC = -1A, IB = -50mA
VCE = -2V, IC = -500mA
VCE = -10V, IE = 100mA,
f = 100MHz
Min.
-30
-30
-6
-
-
-
200
-
Output capacitance
Cob
VCB = -10V, IE = 0mA,
f = 1MHz
-
Turn-On time
Storage time
Fall time
ton*4 IC = -2.5A, VCC = -10V
tstg*4 IB1 = -250mA
tf*4 IB2 = 250mA
-
-
-
*1 Pw=1ms 1PULSE
*2 Mounted on FR4 board(25.4×25.4×1.6mm, Cu PAD645mm2).
*3 Pw=10ms
  Mounted on FR4 board(25.4×25.4×1.6mm, Cu PAD645mm2).
*4 SEE SWITCHING TIME TEST CIRCUIT
Values
Typ.
-
-
-
-
-
-90
-
240
40
45
200
25
Max.
-
-
-
-100
-100
-200
500
-
-
-
-
-
Unit
V
V
V
nA
nA
mV
-
MHz
pF
ns
ns
ns
                                            
 
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/6
                                        
20140128 - Rev.001









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2SAR542F3 Даташит, Описание, Даташиты
2SAR542F3
lElectrical characteristic curves(Ta = 25°C)
      Datasheet
Fig.1 Grounded Emitter Propagation Characteristics
Fig.2 Typical Output Characteristics
Fig.3 DC Current Gain vs. Collector Current(I)
Fig.4 DC Current Gain vs. Collector Current(II)
                                                                                          
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
3/6
20140128 - Rev.001










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2SAR542F3PNP -3.0A -30V Middle Power TransistorROHM Semiconductor
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