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2SAR552P PDF даташит

Спецификация 2SAR552P изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «Midium Power Transistors».

Детали детали

Номер произв 2SAR552P
Описание Midium Power Transistors
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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2SAR552P Даташит, Описание, Даташиты
Midium Power Transistors (-30V / -3A)
2SAR552P
Structure
PNP Silicon epitaxial planar transistor
Features
1) Low saturation voltage, typically
VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA)
2) High speed switching
Applications
Driver
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
2SAR552P
Taping
T100
1000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
VCBO
VCEO
VEBO
IC
ICP *1
PD *2
PD *3
Tj
Tstg
-30
-30
-6
-3
-6
0.5
2
150
-55 to 150
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
Unit
V
V
V
A
A
W
W
C
C
Dimensions (Unit : mm)
(1) (2) (3)
Abbreviated symbol : MF
Inner circuit (Unit : mm)
(1) Base
(2) Collector
(3) Emitter
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.12 - Rev.A









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2SAR552P Даташит, Описание, Даташиты
2SAR552P
Electrical characteristic (Ta = 25C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sa*t)1
hFE
fT *1
Min.
-30
-30
-6
-
-
-
200
-
Collector output capacitance
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Cob
ton *2
tstg *2
tf *2
-
-
-
-
Data Sheet
Typ.
-
-
-
-
-
-200
-
330
25
35
210
15
Max.
-
-
-
-1
-1
-400
500
-
-
-
-
-
Unit Conditions
V IC= -1mA
V IC= -100μA
V IE= -100μA
A VCB= -30V
A VEB= -4V
mV IC= -1A, IB= -50mA
- VCE= -2V, IC= -500mA
MHz
VCE= -10V
IE=100mA, f=100MHz
pF
VCB= -10V, IE=0A
f=1MHz
ns
ns
IC= -1.5A,IB1= -150mA,
IB2=150mA,VCC ~_-10V
ns
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.12 - Rev.A









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2SAR552P Даташит, Описание, Даташиты
2SAR552P
Electrical characteristic curves
-0.50-5.0mA-3.0mA
-0.45
-2.0mA
-0.40
-0.35
-1.5mA
-0.30
-0.25
-0.20
-1.0mA
-0.15
-0.10
-0.5mA
-0.05
0.00
0.0 -0.5 -1.0 -1.5
-2.0
COLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.1 Typical Output Characteristics
1000
Ta=25°C
VCE = -5V
100 -2V
10
-1
-10
-100
-1000 -10000
COLLECTOR CURRENT : IC[mA]
Fig.2 DC Current Gain vs.
Collector Current ( Ι )
Data Sheet
1000
VCE = -2V
100 Ta=125°C
75°C
25°C
-40°C
10
-1
-10 -100 -1000 -10000
COLLECTOR CURRENT : IC[mA]
Fig3. DC Current Gain vs.
Collector Current ( ΙΙ )
-1
Ta=25°C
-0.1
-0.01
IC/IB=50
20
10
-0.001
-1
-10 -100 -1000 -10000
COLLECTOR CURRENT : IC[mA]
Fig.4 Collector-Emitter Saturation Voltage
vs. Collector Current ( Ι )
-1 IC/IB=20
-0.1
-0.01
Ta=125°C
75°C
25°C
-40°C
-0.001
-1
-10 -100 -1000 -10000
COLLECTOR CURRENT : IC[mA]
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current ( ΙΙ )
-10000
VCE = -2V
-1000
-100
Ta=125°C
75°C
25°C
-40°C
-10
-1
-0.2 -0.7 -1.2
BASE TO EMITTER VOLTAGE : VBE[V]
Fig.6 Ground Emitter Propagation
Characteristics
1000
100
10
Ta=25°C
f=1MHz
IE=0A
Cib IC=0A
Cob
1000 Ta=25°C
VCE = -10V
100
1
-0.1 -1 -10 -100
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
Fig.7 Emitter Input Capacitance vs.
Emitter-Base Voltage
Collector Output Capacitance vs.
Collector-Base Voltage
10
10 100 1000
EMITTER CURRENT : IE[mA]
Fig.8 Gain Bandwidth Product vs.
Emitter Current
-10 Single pulse
-1
1ms
10ms
100ms
-0.1 DC Ta=25°C
(Mounted on a
recommended land)
DC Ta=25°C
(Mounted on a ceramic board)
-0.01
-0.1 -1 -10
-100
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.9 Safe Operating Area
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
3/4
2009.12 - Rev.A










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