|
|
Datasheet CMSLT708 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CMSLT708 | 1-8 channel capacitive touch switch Cmsemicon
CMSLT708
1-8 通道电容式触摸开关 专用芯片
(内置 7*8LED 驱动模块)
CMSLT708
V1.0
请注意以下有关中微知识产权政策
＊ 中微半导体公司已申请了专利，享有绝对的合法权益。与中微公司产品有关的专利权并未被同意授权使用� |  MCU | data |
CMS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CMS-S032-020 | SCHOTTKY BARRIER DIODE
CMS-S032-020
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.814 * 0.814 mm
2
Bond Pad size(B)) :
0.686 * 0.686 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Me  Champion Microelectronic diode | | |
| 2 | CMS-S032-040 | SCHOTTKY BARRIER DIODE
CMS-S032-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.814 * 0.814 mm
2
Bond Pad size(B) :
0.686 * 0.686 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
| 3 | CMS-S035-020 | SCHOTTKY BARRIER DIODE
CMS-S035-020
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.889 * 0.889 mm
2
Bond Pad size(B) :
0.762 * 0.762 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
| 4 | CMS-S035-040 | SCHOTTKY BARRIER DIODE
CMS-S035-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.889 * 0.889 mm
2
Bond Pad size(B) :
0.762 * 0.762 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
| 5 | CMS-S040-020 | SCHOTTKY BARRIER DIODE
CMS-S040-020
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
1.016 * 1.016 mm
2
Bond Pad size(B) :
0.889 * 0.889 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
| 6 | CMS-S040-040 | SCHOTTKY BARRIER DIODE CMS-S040-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
1.016 * 1.016 mm
2
Bond Pad size(B) :
0.889 * 0.889 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Metalization :
Cathode  Champion diode | | |
| 7 | CMS-S040-040L | SCHOTTKY BARRIER DIODE
CMS-S040-040L
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
1.016 * 1.016 mm
2
Bond Pad size(B) :
0.889 * 0.889 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Me Champion Microelectronic diode | |
| Esta página es del resultado de búsqueda del CMSLT708. Si pulsa el resultado de búsqueda de CMSLT708 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |