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2N7002 PDF даташит

Спецификация 2N7002 изготовлена ​​​​«Philips» и имеет функцию, называемую «60V, 180mA, N-channel Vertical D-MOS Transistor».

Детали детали

Номер произв 2N7002
Описание 60V, 180mA, N-channel Vertical D-MOS Transistor
Производители Philips
логотип Philips логотип 

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2N7002 Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
2N7002
N-channel vertical D-MOS
transistor
Product specification
File under Discrete Semiconductors, SC13b
April 1995









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2N7002 Даташит, Описание, Даташиты
Philips Semiconductors
N-channel vertical D-MOS transistor
Product specification
2N7002
FEATURES
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown.
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a SOT23
envelope. It is designed for use as a
Surface Mounted Device (SMD) in
thin and thick-film circuits, with
applications in relay, high-speed and
line transformer drivers.
PINNING - SOT23
PIN DESCRIPTION
1 gate
2 source
3 drain
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
RDS(on)
drain-source voltage
drain current
drain-source on-resistance
VGS(th)
gate-source threshold
voltage
CONDITIONS
DC value
ID = 500 mA
VGS = 10 V
ID = 1 mA
VGS = VDS
MAX. UNIT
60 V
180 mA
5
3V
PIN CONFIGURATION
ook, halfpage
3
handbook, 2 columns
d
1
Top view
2
MSB003
g
MBB076 - 1 s
Marking code: 702
Fig.1 Simplified outline and symbol.
April 1995
2









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2N7002 Даташит, Описание, Даташиты
Philips Semiconductors
N-channel vertical D-MOS transistor
Product specification
2N7002
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VDS
±VGSO
ID
IDM
Ptot
drain-source voltage
gate-source voltage
drain current
drain current
total power dissipation
Tstg storage temperature range
Tj junction temperature
open drain
DC value
peak value
Tamb = 25 °C
(note 1)
(note 2)
Notes
1. Mounted on a ceramic substrate measuring 10 × 8 × 0.7 mm.
2. Mounted on a printed circuit board.
THERMAL RESISTANCE
SYMBOL
Rth j-a
PARAMETER
from junction to ambient
CONDITIONS
note 1
note 2
Notes
1. Mounted on a ceramic substrate measuring 10 × 8 × 0.7 mm.
2. Mounted on a printed circuit board.
MIN. MAX. UNIT
60 V
40 V
180 mA
800 mA
300 mW
250 mW
65 150 °C
150 °C
VALUE
430
500
UNIT
K/W
K/W
April 1995
3










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