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D2218 PDF даташит

Спецификация D2218 изготовлена ​​​​«Sanyo» и имеет функцию, называемую «NPN Transistor - 2SD2218».

Детали детали

Номер произв D2218
Описание NPN Transistor - 2SD2218
Производители Sanyo
логотип Sanyo логотип 

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D2218 Даташит, Описание, Даташиты
Ordering number:EN3363
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1467/2SD2218
General High-Current Switching Applications
Applications
· Relay drivers, high-speed inverters, converters.
Features
· Micaless package facilitating mounting.
· Low collector-to-emitter saturation voltage :
VCE(sat)=–0.5V (PNP), 0.4V (NPN) max.
· Large current capacity.
Package Dimensions
unit:mm
2041A
[2SB1467/2SD2218]
( ) : 2SB1467
Specifications
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
(–)60
(–)30
(–)6
(–)8
(–)15
2
20
150
–55 to +150
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
ICBO
IEBO
hFE1*
hFE2
fT
VCE(sat)
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)4A
VCE=(–)5V, IC=(–)1A
IC=(–)3A, IB=(–)0.15A
Ratings
min typ
70*
30
120
max
(–)0.1
(–)0.1
280*
(–0.5)
0.4
Unit
mA
mA
MHz
V
V
* : The 2SB1467/2SD2218 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2098HA (KT)/N120MH, JK (KOTO) No.3363–1/4









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D2218 Даташит, Описание, Даташиты
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
2SB1467/2SD2218
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
IC=(–)1mA, IE=0
IC=(–)1mA, RBE=
IE=(–)1mA, IC=0
See specified test circuit.
See specified test circuit.
tf See specified test circuit.
Switching Time Test Circuit
Ratings
min typ
(–)60
(–)30
(–)6
0.1
(0.2)
0.5
0.03
max
Unit
V
V
V
µs
µs
µs
µs
No.3363–2/4









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D2218 Даташит, Описание, Даташиты
2SB1467/2SD2218
No.3363–3/4










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