2N03L05 PDF даташит
Спецификация 2N03L05 изготовлена «Infineon Technologies» и имеет функцию, называемую « Power-Transistor». |
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Детали детали
Номер произв | 2N03L05 |
Описание | Power-Transistor |
Производители | Infineon Technologies |
логотип |
8 Pages
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OptiMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x RDS(on)
product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO262 -3-1
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
Product Summary
VDS
RDS(on)
ID
30 V
5.2 mΩ
80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N03S2L-05
SPB80N03S2L-05
SPI80N03S2L-05
Package
P- TO220 -3-1
P- TO263 -3-2
P- TO262 -3-1
Ordering Code
Q67042-S4033
Q67042-S4032
Q67042-S4093
Marking
2N03L05
2N03L05
2N03L05
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
325
16
6
±20
167
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-04-24
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Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
- 0.6 0.9 K/W
- - 62
- - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
ID=110µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=55A
VGS=4.5V, ID=55A, SMD version
Drain-source on-state resistance4)
VGS=10V, ID=55A
VGS=10V, ID=55A, SMD version
V(BR)DSS 30
VGS(th)
1.2
-
1.6
-V
2
IDSS
IGSS
µA
- 0.01 1
- 10 100
- 1 100 nA
RDS(on)
mΩ
- 5.6 7.5
- 5.2 7.2
RDS(on)
-
4 5.2
- 3.7 4.9
1Current limited by bondwire ; with an RthJC = 0.9K/W the chip is able to carry ID= 139A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Diagrams are related to straight lead versions
Page 2
2003-04-24
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Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
Symbol
Conditions
Values
Unit
min. typ. max.
gfs
Ciss
Coss
Crss
RG
td(on)
tr
td(off)
tf
VDS≥2*ID *RDS(on)max,
ID =80A
VGS=0V, VDS =25V,
f=1MHz
VDD =15V, VGS =10V,
ID =20A,
RG=2.7Ω
55
-
-
-
-
-
-
-
-
110 - S
2500 3320 pF
975 1300
215 325
1.75
10
-Ω
15 ns
18 27
44 66
20 30
Qgs VDD =24V, ID =40A
Qgd
Qg VDD =24V, ID =40A,
VGS=0 to 10V
V(plateau) VDD =24V, ID =40A
- 7.9 10.5 nC
- 23.3 35
- 67.5 89.7
- 3.2 - V
IS
ISM
VSD
trr
Qrr
TC=25°C
VGS=0V, IF=80A
VR=15V, I F=lS,
diF/dt=100A/µs
- - 80 A
- - 320
- 0.95 1.26 V
- 46.5 58.1 ns
- 55.5 69.4 nC
Page 3
2003-04-24
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2N03L05 | Power-Transistor | Infineon Technologies |
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