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PDF SST11CP15E Data sheet ( Hoja de datos )
| Número de pieza | SST11CP15E | |
| Descripción | 4.9-5.9 GHz High-Linearity Power Amplifier | |
| Fabricantes | Microchip | |
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4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Data Sheet
The SST11CP15E is a versatile power amplifier designed for 802.11a/n/ac
embedded applications and is based on the highly-reliable InGaP/GaAs HBT
technology. It is easily configured for high-linearity, high-efficiency applications
over a wide temperature range while operating over the 4.9-5.9 GHz frequency
band. The SST11CP15E has excellent linearity while meeting 802.11a spectrum
mask at 23 dBm with a 3.3V power supply, and at 24.5 dBm with a 5.0V supply.
It provides up to 18 dm, at 3% EVM with 802.11a 54 Mbps, and up to 16 dBm, at
1.8% EVM with 802.11ac 351 Mbps Modulation and 3.3V bias. The power ampli-
fier requires only a 4mA reference current for on/off control. It includes a VSWR/
temperature insensitive, linear power detector. The SST11CP15E is offered in a
12-contact UQFN package.
Features
• Small package size
– 12-contact UQFN (2mm x 2mm x 0.6mm max thick-
ness)
• Wide operating voltage range
– VCC = 3.0–5.0V
• High linear output power, 802.11a/n/ac:
– Spectrum mask compliant using 802.11a OFDM
- Up to 24 dBm at 5.0V
- Up to 22 dBm at 3.3V
– Spectrum mask compliant using 802.11n MCS7, 40 MHz
- Up to 22 dBm at 5.0V
- Up to 19 dBm at 3.3V
– ~3% EVM across 5.1-5.9 GHz for 54 Mbps 802.11a
- Up to 20 dBm at 5.0V VCC
- Up to 18 dBm at 3.3V VCC
– 1.8% EVM across 5.1-5.9 GHz for 351 Mbps 802.11ac
- Up to 16 dBm at 3.3V VCC
• High power-added efficiency/low operating current
for 54 Mbps 802.11a applications
– ~10% @ POUT = 19 dBm for 54 Mbps, 3.3V VCC
• Gain:
– Typically >26 dB gain across broadband
4.9-5.9 GHz, 3.3V VCC
• Low idle current
– ~140 mA ICQ, 3.3 V VCC
• High speed power-up/-down
– Turn on/off time (10%~90%) <100 ns
• Low shut-down current (<1 µA)
• On-chip power detector with -20 dB linear dynamic
range
– Temperature Stable
– VSWR insensitive
• 50Ω on-chip input match and simple output match
• Packages available
– 12-pin QFN 2mm x 2mm x 0.55mm
• All lead-free devices are RoHS compliant
Applications
• WLAN (IEEE 802.11a/n/ac)
• Japan WLAN
• HyperLAN2
• Multimedia
• WiMax
©2013 Silicon Storage Technology, Inc.
www.microchip.com
DS70005025C
05/13
1 page  
4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Pin Descriptions
Data Sheet
Table 1: Pin Description
Symbol Pin No. Pin Name Type1 Function
GND
RFIN
0 Ground
1
The center pad should be connected to RF ground with several
low inductance, low resistance vias.
I RF input, DC decoupled
VCCb
2 Power Supply PWR Supply voltage for bias circuit
VREF1
VREF2
3
4
PWR Current Control
PWR Current Control
VREF3
5
PWR Current Control
DET
NC
6 O On-chip power detector
7 No Connection
Unconnected pin
RFOUT
8
O RF Output
GND
VCC3
VCC2
VCC1
9 Ground
Ground (NC is acceptable)
10 Power Supply PWR Power supply, 3rd stage
11 Power Supply PWR Power supply, 2nd stage
12 Power Supply PWR Power supply, 1st stage
1. I=Input, O=Output
T1.1 75025
©2013 Silicon Storage Technology, Inc.
5
DS70005025C
05/13
5 Page 
4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Typical Performance Characteristics
Data Sheet
Test Conditions: VCC1,2 = 3.3V, VCC3 = 5.0V, TA = 25°C, VREG = 2.90V unless oth-
erwise noted
EVM versus Output Power
10
9
8 4920 MHz
7 5180 MHz
6 5500 MHz
5 5850 MHz
4
3
2
1
0
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
75025 F8.0
Figure 8: EVM versus Output Power, VCC = 5.0V
Supply Current versus Output Power
380
370
360
350
340
330
320
310
300
290
280
270
260
250
240
230 4920 MHz
220 5180 MHz
210 5500 MHz
200
190
5850 MHz
180
170
160
150
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
75025 F9.0
Figure 9: DC Current versus Output Power, VCC = 5.0V
©2013 Silicon Storage Technology, Inc.
11
DS70005025C
05/13
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet SST11CP15E.PDF ] | |
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