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S-LRB521S-40T3G PDF даташит

Спецификация S-LRB521S-40T3G изготовлена ​​​​«Leshan Radio Company» и имеет функцию, называемую «SCHOTTKY BARRIER DIODE».

Детали детали

Номер произв S-LRB521S-40T3G
Описание SCHOTTKY BARRIER DIODE
Производители Leshan Radio Company
логотип Leshan Radio Company логотип 

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S-LRB521S-40T3G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
zApplictions
Low current rectification and high speed switching
zFeatures
Extremelysmall surface mounting type. (SOD523)
IO=200mA guaranteed despite the size.
Low VF.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
zConstruction
Silicon epitaxial planar
z We declare that the material of product
compliance with RoHS requirements.
Ordering Information
Device
LRB521S-40T1G
S-LRB521S-40T1G
LRB521S-40T3G
S-LRB521S-40T3G
Marking
S
S
Shipping
3000/Tape&Reel
10000/Tape&Reel
LRB521S-40T1G
S-LRB521S-40T1G
1
2
SOD-523
1
Cathode
2
Anode
MAXIMUM RATINGS (TA = 25°C)
Parameter
DC reverse voltage
Mean rectifying current
Peak forward surge current*
Junction temperature
Storage temperature
*60Hz for 1
Symbol
VR
IO
IFSM
Tj
Tstg
Limits
40
200
4
125
-55~+125
Unit
V
mA
A
°C
°C
ELECTRICAL CHARACTERISTICS(TA= 25°C)
Parameter
Symbol
Forward voltage
Forward voltage
VF
VF
Forward voltage
VF
Reverse current
IR
Reverse current
IR
ESD break down voltage
ESD
Min.
0.16
0.31
0.37
-
-
8
Max.
0.30
0.45
0.52
20
90
-
Unit
V
V
V
µΑ
µΑ
KV
Conditions
I F=10mA
I F=100mA
IF=200mA
VR=10V
VR=40V
C=100pF,R=1.5K
forward and reverse:1 time
Rev.O 1/4









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S-LRB521S-40T3G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
LRB521S-40T1G , S-LRB521S-40T1G
zElectrical characteristic curves
1000
Ta=75℃
100 Ta=125℃
Ta=150℃
10
Ta=-25℃
Ta=25℃
1
0 100 200 300 400 500 600
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
100000
10000
1000
100
10
1
0.1
0.01
0
Ta=150℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
10 20
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
30
100
f=1MHz
10
1
0 10 20 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
100
520
Ta=25℃
90
IF=200mA
80
510
n=30pcs
70
60
500 50
490
AVE:495.2mV
480
40
30
20
10
0
470
VF DISPERSION MAP
Ta=25℃
VR=40V
n=30pcs
AVE:6.86uA
IR DISPERSION MAP
30
29
Ta=25℃
f=1MHz
28 VR=0V
27 n=10pcs
26
25 AVE:27.2pF
24
23
22
21
20
Ct DISPERSION MAP
20
Ifsm 1cyc
15
8.3ms
10
5
AVE:5.60A
0
IFSM DISPERSION MAP
10 10
Ifsm
8.3ms 8.3ms
1cyc
55
Ifsm
t
0
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0
1 10 100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
Rth(j-a)
Rth(j-c)
100 Mounted on epoxy board
IM=1mA
IF=20mA
10
0.001
1ms time
300us
0.1 10
TIME:(s)
Rth-t CHARACTERISTICS
1000
0.3
0.25 D=1/2
0.2
0.15 Sin(θ=180)
DC
0.1
0.05
0
0 0.1 0.2 0.3
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
0.4
5
4
3
D=1/2
2 DC
Sin(θ=180)
1
0
0 10 20 30 40
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
Rev.O 2/4









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S-LRB521S-40T3G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
LRB521S-40T1G , S-LRB521S-40T1G
0.5
0.4 DC
0.3
0.2
0A Io
0V
t
VR
D=t/T
VR=20V
T Tj=150℃
Sin(θ=180)
0.1
D=1/2
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
0.5
0.4 DC
0.3
D=1/2
0.2
0A Io
0V
t
VR
D=t/T
VR=20V
T Tj=150℃
0.1 Sin(θ=180)
0
0 25 50 75 100 125 150
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
Rev.O 3/4










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Номер в каталогеОписаниеПроизводители
S-LRB521S-40T3GSCHOTTKY BARRIER DIODELeshan Radio Company
Leshan Radio Company

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