(PDF) GT50JR22 Datasheet - Silicon N-Channel IGBT

Número de pieza	GT50JR22
Descripción	Silicon N-Channel IGBT
Fabricantes	Toshiba
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No Preview Available ! Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.05 µs (typ.) (IC = 50 A) FWD : trr = 0.35 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A) (6) High junction temperature : Tj = 175 (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter 1 2012-10-15 Rev.1.0 1 page GT50JR22 Fig. 8.7 Switching Time - RG Fig. 8.8 rth(j-c) - tw (Guaranteed Maximum) Fig. 8.9 Safe Operating Area (Guaranteed Maximum) Fig. 8.10 IF - VF Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 5 2012-10-15 Rev.1.0 5 Page

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PDF GT50JR22 Data sheet ( Hoja de datos )