B710 PDF даташит
Спецификация B710 изготовлена «Panasonic Semiconductor» и имеет функцию, называемую «PNP Transistor - 2SB710». |
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Детали детали
Номер произв | B710 |
Описание | PNP Transistor - 2SB710 |
Производители | Panasonic Semiconductor |
логотип |
3 Pages
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Transistors
2SB0710 (2SB710), 2SB0710A (2SB710A)
Silicon PNP epitaxial planar type
For general amplification
Unit: mm
Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A)
■ Features
• Large collector current IC
• Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SB0710 VCBO
2SB0710A
−30
−60
Collector-emitter voltage 2SB0710 VCEO
(Base open)
2SB0710A
−25
−50
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
−5
− 0.5
−1
200
150
−55 to +150
■ Electrical Characteristics Ta = 25°C ± 3°C
Unit
V
V
V
A
A
mW
°C
°C
0.40+–00..0150
3
0.16+–00..0160
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol:
• 2SB0710: C
• 2SB0710A: D
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
2SB0710
2SB0710A
2SB0710
2SB0710A
VCBO
VCEO
IC = −10 µA, IE = 0
IC = −10 mA, IB = 0
−30
−60
−25
−50
V
V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−5
V
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0
− 0.1 µA
Forward current transfer ratio *1
hFE1 *2 VCE = −10 V, IC = −150 mA
85 340
hFE2 VCE = −10 V, IC = −500 mA
40
Collector-emitter saturation voltage *1 VCE(sat) IC = −300 mA, IB = −30 mA
− 0.35 − 0.60 V
Base-emitter saturation voltage *1
VBE(sat) IC = −300 mA, IB = −30 mA
−1.1 −1.5
V
Transition frequency
fT VCB = −10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
6 15 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
hFE1
Marking 2SB0710
Q
85 to 170
CQ
R
120 to 240
CR
S
170 to 340
CS
No-rank
85 to 340
C
Product of no-rank is not
classified and have no
marking symbol for rank.
symbol 2SB0710A
DQ
DR
DS
D
Note) The part numbers in the parenthesis show conventional part number.
Publication date: May 2003
SJC00048CED
1
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2SB0710, 2SB0710A
PC Ta
240
200
160
120
80
40
0
0 40 80 120 160
Ambient temperature Ta (°C)
−1 200
−1 000
IC VCE
Ta = 25°C
−800
−600
−400
−200
IB = −10 mA
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
0
0 –2 –4 –6 –8 –10 –12
Collector-emitter voltage VCE (V)
−800
−700
−600
−500
−400
−300
−200
−100
0
0
IC IB
VCE = −10 V
Ta = 25°C
−2 −4 −6 −8
Base current IB (mA)
−10
−10
−1
− 0.1
− 0.01
VCE(sat) IC
IC / IB = 10
Ta=75°C
25°C
−25°C
VBE(sat) IC
−100
IC / IB = 10
−10
25°C
−1 Ta = −25°C
75°C
− 0.1
− 0.001
−1
−10
−100
−1 000
Collector current IC (mA)
− 0.01
−1
−10
−100
−1 000
Collector current IC (mA)
hFE IC
600
VCE = −10 V
500
400
300
Ta = 75°C
200 25°C
−25°C
100
0
− 0.01
− 0.1
−1
Collector current IC (A)
−10
fT IE
240
VCB = −10 V
Ta = 25°C
200
160
120
80
40
0
1 10 100
Emitter current IE (mA)
Cob VCB
24
IE = 0
f = 1 MHz
20 Ta = 25°C
16
12
8
4
0
−1 −10 −100
Collector-base voltage VCB (V)
VCER RBE
−120
−100
IC = −2 mA
Ta = 25°C
−80
−60
2SB0710A
−40
2SB0710
−20
0
1 10 100 1 000
Base-emitter resistance RBE (kΩ)
2 SJC00048CED
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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
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electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
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(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
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are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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