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STP31N65M5 PDF даташит

Спецификация STP31N65M5 изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «N-channel Power MOSFET».

Детали детали

Номер произв STP31N65M5
Описание N-channel Power MOSFET
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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STP31N65M5 Даташит, Описание, Даташиты
STB31N65M5, STF31N65M5, STFI31N65M5,
STP31N65M5, STW31N65M5
N-channel 650 V, 0.124 typ., 22 A MDmesh™ V Power MOSFET
22
in D PAK, TO-220FP, I PakFP, TO-220 and TO-247 packages
Datasheet production data
Features
TAB
2
3
1
D2PAK
TAB
3
2
1
TO-220FP
12 3
I2PakFP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
Order codes VDSS @ TJmax RDS(on) max ID
STB31N65M5
STF31N65M5
STFI31N65M5
710 V
< 0.148 Ω 22 A
STP31N65M5
STW31N65M5
Worldwide best RDS(on) * area
Higher VDSS rating and high dv/dt capability
Excellent switching performance
100% avalanche tested
' Ć7$%
Applications
Switching applications
* 
6 
$0Y
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Order code
STB31N65M5
STF31N65M5
STFI31N65M5
STP31N65M5
STW31N65M5
Table 1. Device summary
Marking
Package
2
D PAK
31N65M5
TO-220FP
2
I PakFP
TO-220
TO-247
Packaging
Tape and reel
Tube
March 2013
This is information on a product in full production.
DocID022848 Rev 3
1/25
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STP31N65M5 Даташит, Описание, Даташиты
Contents
Contents
STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves)
.......................... 7
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
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STP31N65M5 Даташит, Описание, Даташиты
STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Value
Parameter
D2PAK
TO-220
TO-247
TO-220FP
I2PakFP
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
(1)
IDM Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
(2)
dv/dt Peak diode recovery voltage slope
(3)
dv/dt MOSFET dv/dt ruggedness
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited by maximum junction temperature.
2. ISD 22 A, di/dt 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V
3. VDS 480 V
22
13.9
88
150
± 25
(1)
22
(1)
13.9
(1)
88
30
15
50
2500
- 55 to 150
150
Unit
V
A
A
A
W
V/ns
V/ns
V
°C
°C
Symbol
Parameter
Table 3. Thermal data
Value
D2PAK
TO-220FP
I2PakFP
TO-220
Unit
TO-247
Thermal resistance junction-
Rthj-case case max
0.83
(1) Thermal resistance junction-
Rthj-pcb pcb max
30
Thermal resistance junction-
Rthj-amb ambient max
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
4.17
62.5
0.83 °C/W
°C/W
50 °C/W
DocID022848 Rev 3
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Номер в каталогеОписаниеПроизводители
STP31N65M5N-channel Power MOSFETSTMicroelectronics
STMicroelectronics

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