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PDF STF31N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STF31N65M5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB31N65M5, STF31N65M5, STFI31N65M5,
STP31N65M5, STW31N65M5
N-channel 650 V, 0.124 Ω typ., 22 A MDmesh™ V Power MOSFET
22
in D PAK, TO-220FP, I PakFP, TO-220 and TO-247 packages
Datasheet − production data
Features
TAB
2
3
1
D2PAK
TAB
3
2
1
TO-220FP
12 3
I2PakFP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
Order codes VDSS @ TJmax RDS(on) max ID
STB31N65M5
STF31N65M5
STFI31N65M5
710 V
< 0.148 Ω 22 A
STP31N65M5
STW31N65M5
• Worldwide best RDS(on) * area
• Higher VDSS rating and high dv/dt capability
• Excellent switching performance
• 100% avalanche tested
' Ć7$%
Applications
• Switching applications
*
6
$0Y
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Order code
STB31N65M5
STF31N65M5
STFI31N65M5
STP31N65M5
STW31N65M5
Table 1. Device summary
Marking
Package
2
D PAK
31N65M5
TO-220FP
2
I PakFP
TO-220
TO-247
Packaging
Tape and reel
Tube
March 2013
This is information on a product in full production.
DocID022848 Rev 3
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www.st.com
25
1 page  
STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5 Electrical characteristics
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On /off states
Test conditions
Drain-source
V(BR)DSS breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 μA
Static drain-source
on-resistance
VGS = 10 V, ID = 11 A
Min. Typ. Max. Unit
650 V
1 μA
100 μA
± 100 nA
3 4 5V
0.124 0.148 Ω
Symbol
Parameter
Table 6. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
1865
pF
- 45 - pF
4.2 pF
(1)
Co(tr)
Equivalent
capacitance time
related
Equivalent
(2)
Co(er) capacitance energy
related
VDS = 0 to 520 V, VGS = 0
- 146 - pF
- 43 - pF
Intrinsic gate
RG resistance
f = 1 MHz open drain
- 2.8 - Ω
Qg Total gate charge
VDD = 520 V, ID = 11 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 20)
45 nC
- 11.5 - nC
20 nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
DocID022848 Rev 3
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5 Page 
STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5 Package mechanical
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
DocID022848 Rev 3
11/25
11 Page | ||
| Páginas | Total 25 Páginas | |
| PDF Descargar | [ Datasheet STF31N65M5.PDF ] | |
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