B754 PDF даташит
Спецификация B754 изготовлена «SavantIC» и имеет функцию, называемую «PNP Transistor - 2SB754». |
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Детали детали
Номер произв | B754 |
Описание | PNP Transistor - 2SB754 |
Производители | SavantIC |
логотип |
4 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SD844
·High collector current :IC=-7A
·Low collector saturation voltage
·High power dissipation
APPLICATIONS
·High current switching applications
·Power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SB754
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC Collector current
IE Emitter current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-50
-50
-5
-7
7
2.5
60
150
-55~150
UNIT
V
V
V
A
A
W
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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB754
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0
-50
V
V(BR)EBO Emitter-base breakdown voltage
IE=-10mA; IC=0
-5
V
VCEsat Collector-emitter saturation voltage IC=-4.0A; IB=-0.4A
-0.2 -0.4
V
VBE Base-emitter voltage
IC=-4A ; VCE=-1V
-0.9 -1.2
V
ICBO Collector cut-off current
IEBO Emitter cut-off current
VCB=-50V; IE=0
VEB=-5V; IC=0
-10 µA
-10 µA
hFE-1
DC current gain
IC=-1A ; VCE=-1V
70 240
hFE-2
DC current gain
IC=-4A ; VCE=-1V
30
fT Transition frequency
IC=-1A ; VCE=-5V
10 MHz
COB Collector output capacitance
IE=0;f=1MHz ; VCB=-10V
300 pF
hFE-1 Classifications
OY
70-140
120-240
2
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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB754
Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm)
3
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