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Номер произв	ME4856-G
Описание	N-Channel 30-V(D-S) MOSFET
Производители	Matsuki
логотип
1Page No Preview Available ! N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4856/ME4856-G FEATURES ● RDS(ON)≦6mΩ@VGS=10V ● RDS(ON)≦8.5mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Battery Powered System ● DC/DC Converter ● Load Switch e Ordering Information: ME4856 (Pb-free) ME4856-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Maximum Power Dissipation TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range Thermal Resistance-Junction to Ambient* * The device mounted on 1in2 FR4 board with 2 oz copper Symbol VDS VGS ID IDM PD TJ, Tstg RθJA Maximum Ratings 30 ±20 16 12.9 65 2.5 1.6 -55 to 150 50 Unit V V A A W ℃ ℃/W Aug, 2012-Ver4.2 01 No Preview Available ! ME4856/ME4856-G N-Channel 30-V(D-S) MOSFET Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol STATIC BVDSS VGS(th) IGSS IDSS Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-State Resistance a VSD Diode Forward Voltage DYNAMIC Qg Total Gate Charge(10V) Qg Total Gate Charge(4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Ciss Input capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg td(on) tr td(off) tf Gate-Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Limit Min Typ Max Unit VGS=0V, ID=250μA VDS=VGS, ID=250μA VDS=0V, VGS=±20V VDS=30V, VGS=0V VGS=10V, ID= 10A VGS=4.5V, ID= 7.5A IS=2.7A, VGS=0V 30 V 1.3 1.8 3 V ±100 1 nA μA 4.5 6 mΩ 6.5 8.5 0.72 1.1 V VDS=15V, VGS=10V, ID=17A VDS=15V, VGS=4.5V, ID=17A VDS=15V, VGS=0V, f=1.0MHz VDS=0V, VGS=0V, f=1MHz VDD=15V, RL =15Ω ID=1A, VGEN=10V RG=6Ω 55 29 10 15 2400 350 110 1.2 23 12 86 12 nC pF Ω ns Note: a: Pulse test: pulse width＜=300us, duty cycle＜=2％ b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. Aug, 2012-Ver4.2 02 No Preview Available ! N-Channel 30-V(D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) ME4856/ME4856-G Aug, 2012-Ver4.2 03
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