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Номер произв ME4856-G
Описание N-Channel 30-V(D-S) MOSFET
Производители Matsuki
логотип Matsuki логотип 



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ME4856-G Даташит, Описание, Даташиты
N-Channel 30-V(D-S) MOSFET
GENERAL DESCRIPTION
The ME4856 is the N-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4856/ME4856-G
FEATURES
RDS(ON)6m@VGS=10V
RDS(ON)8.5m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Battery Powered System
DC/DC Converter
Load Switch
e Ordering Information: ME4856 (Pb-free)
ME4856-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Operating Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient*
* The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
Maximum Ratings
30
±20
16
12.9
65
2.5
1.6
-55 to 150
50
Unit
V
V
A
A
W
℃/W
Aug, 2012-Ver4.2
01









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ME4856-G Даташит, Описание, Даташиты
ME4856/ME4856-G
N-Channel 30-V(D-S) MOSFET
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol
STATIC
BVDSS
VGS(th)
IGSS
IDSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-State Resistance a
VSD Diode Forward Voltage
DYNAMIC
Qg Total Gate Charge(10V)
Qg Total Gate Charge(4.5V)
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
td(on)
tr
td(off)
tf
Gate-Resistance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Limit
Min Typ Max Unit
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=30V, VGS=0V
VGS=10V, ID= 10A
VGS=4.5V, ID= 7.5A
IS=2.7A, VGS=0V
30 V
1.3 1.8
3
V
±100
1
nA
μA
4.5 6
mΩ
6.5 8.5
0.72 1.1
V
VDS=15V, VGS=10V, ID=17A
VDS=15V, VGS=4.5V, ID=17A
VDS=15V, VGS=0V, f=1.0MHz
VDS=0V, VGS=0V, f=1MHz
VDD=15V, RL =15Ω
ID=1A, VGEN=10V
RG=6Ω
55
29
10
15
2400
350
110
1.2
23
12
86
12
nC
pF
Ω
ns
Note: a: Pulse test: pulse width=300us, duty cycle=2
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Aug, 2012-Ver4.2
02









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ME4856-G Даташит, Описание, Даташиты
N-Channel 30-V(D-S) MOSFET
Typical Characteristics (TJ =25Noted)
ME4856/ME4856-G
Aug, 2012-Ver4.2
03










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