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Número de pieza | ME4856 | |
Descripción | N-Channel 30-V(D-S) MOSFET | |
Fabricantes | Matsuki | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ME4856 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N-Channel 30-V(D-S) MOSFET
GENERAL DESCRIPTION
The ME4856 is the N-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
ME4856
FEATURES
● RDS(ON)≦6mΩ@VGS=10V
● RDS(ON)≦8.5mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Battery Powered System
● DC/DC Converter
● Load Switch
PIN CONFIGURATION
(SOP-8)
Top View
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current( TJ =150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Pulse Source-Drain Diode Current
Maximum Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
thermal Resistance-Junction to Case
* The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
PD
TJ
RθJA
RθJC
Limit
30
±20
17
14
50
2.7
50
3.0
2.0
-55 to 150
T≦10 sec
30
Steady State
34
60
July, 2008-Ver4.0
Unit
V
V
A
A
A
A
W
℃
℃/W
℃/W
01
1 page N-Channel 30-V(D-S) MOSFET
SOP-8 Package Outline
ME4856
DIM
A
A1
B
C
D
E
e
H
h
L
θ
Note: 1. Refer to JEDEC MS-012AA.
2. Dimension “D” does not include mold flash, protrusions
or gate burrs . Mold flash, protrusions or gate burrs shall not
exceed 0.15 mm per side.
MILLIMETERS
MIN MAX
1.35 1.75
0.10 0.25
0.35 0.49
0.18 0.25
4.80 5.00
3.80
4.00
1.27 BSC
5.80 6.20
0.25
0.50
0.40
1.25
0° 7°
July, 2008-Ver4.0
05
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet ME4856.PDF ] |
Número de pieza | Descripción | Fabricantes |
ME4856 | N-Channel 30-V(D-S) MOSFET | Matsuki |
ME4856-G | N-Channel 30-V(D-S) MOSFET | Matsuki |
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