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MDD255-14N1 PDF даташит

Спецификация MDD255-14N1 изготовлена ​​​​«IXYS Corporation» и имеет функцию, называемую «HIgh Power Diode Modules».

Детали детали

Номер произв MDD255-14N1
Описание HIgh Power Diode Modules
Производители IXYS Corporation
логотип IXYS Corporation логотип 

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MDD255-14N1 Даташит, Описание, Даташиты
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MDD 255
High Power
Diode Modules
IFRMS = 2x 450 A
IFAVM = 2x 270 A
VRRM = 1200-2200 V
V
RSM
VDSM
V
1300
1500
1700
1900
2100
2300
V
RRM
VDRM
V
1200
1400
1600
1800
2000
2200
Type
MDD 255-12N1
MDD 255-14N1
MDD 255-16N1
MDD 255-18N1
MDD 255-20N1
MDD 255-22N1
312
3
2
1
Symbol
IFRMS
IFAVM
IFSM
òi2dt
T
VJ
TVJM
T
stg
VISOL
Md
Weight
Symbol
IRRM
VF
V
T0
rT
R
thJC
RthJK
QS
IRM
dS
d
A
a
Test Conditions
TVJ = TVJM
TC = 100°C; 180° sine
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
TVJ = TVJM
V =0
R
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
50/60 Hz, RMS
t = 1 min
I
ISOL
£
1
mA
t=1s
Mounting torque (M6)
Terminal connection torque (M8)
Typical including screws
Test Conditions
TVJ = TVJM; VR = VRRM
IF = 600 A; TVJ = 25°C
For power-loss calculations only
TVJ = TVJM
per diode; DC current
per module
per diode; DC current
per module
other values
see MCC 255
TVJ = 125°C; IF = 400 A; -di/dt = 50 A/ms
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
Maximum Ratings
450 A
270 A
9500
10200
A
A
8400
9000
A
A
451 000
437 000
A2s
A2s
353 000
340 000
A2s
A2s
-40...+150
150
-40...+125
°C
°C
°C
3000
3600
V~
V~
4.5-7/40-62 Nm/lb.in.
11-13/97-115 Nm/lb.in.
750 g
Characteristic Values
30 mA
1.4 V
0.8 V
0.6 mW
0.140
0.07
0.18
0.09
K/W
K/W
K/W
K/W
700 mC
260 A
12.7
9.6
50
mm
mm
m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
Features
q International standard package
q Direct copper bonded Al O -ceramic
23
with copper base plate
q Planar passivated chips
q Isolation voltage 3600 V~
q UL registered E 72873
Applications
q Supplies for DC power equipment
q DC supply for PWM inverter
q Field supply for DC motors
q Battery DC power supplies
Advantages
q Simple mounting
q Improved temperature and power
cycling
q Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
M8x20
© 2000 IXYS All rights reserved
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MDD255-14N1 Даташит, Описание, Даташиты
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MDD 255
10000
IFSM
A
8000
6000
50 Hz
80 % VRRM
TVJ = 45°C
TVJ = 150°C
4000
2000
0
0.001
0.01
0.1 s
t
Fig. 1 Surge overload current
I : Crest value, t: duration
FSM
1
500
Ptot
W
400
300
DC
200 180° sin
120°
60°
30°
100
106
I2t VR = 0V
A2s
500
A
450
IFAVM 400
350
DC
180° sin
120°
60°
30°
TVJ = 45°C
300
250
TVJ = 150°C
200
150
100
50
105
1
t
Fig. 2 I2t versus time (1-10 ms)
ms 10
0
0 25 50 75 100 125 °C 150
TC
Fig. 3 Maximum forward current
at case temperature
RthKA K/W
0.1
0.2
0.3
0.4
0.6
0.8
1.2
Fig. 4 Power dissipation versus
forward current and ambient
temperature (per diode)
0
0 100 200 300 400 A 0
IFAVM
25 50 75 100 1°2C5 150
TA
1500
Ptot
W
1250
1000
750
500
250
RL
Circuit
B2U
2 x MDD255
RthKA K/W
0.06
0.08
0.1
0.15
0.2
0.3
0.5
0
0 100 200 300 400 500 A 0
IdAVM
25 50 75 100 1°2C5 150
TA
Fig. 5 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
© 2000 IXYS All rights reserved
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MDD255-14N1 Даташит, Описание, Даташиты
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MDD 255
2500
W
Ptot 2000
1500
1000
500
Circuit
B6U
3 x MDD255
RthKA K/W
0.03
0.06
0.1
0.15
0.2
0.3
0.4
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
0
0 200 400 600 800 A 0
IdAVM
25 50 75 100 125 °C 150
TA
0.25 Fig. 7 Transient thermal impedance
K/W junction to case (per diode)
0.20 RthJC for various conduction angles d:
ZthJC
0.15
0.10
0.05
d RthJC (K/W)
DC 0.139
180°
0.148
30°
120°
0.156
60° 60° 0.176
120°
180°
30° 0.214
DC
Constants for Z calculation:
thJC
i
Rthi (K/W)
ti (s)
0.00
1
0.0066
0.00054
10-3
10-2
10-1
100
101 s
102
2
0.0358
0.098
t
3
0.0831
0.54
4
0.0129
12
0.30 Fig. 8 Transient thermal impedance
junction to heatsink (per diode)
K/W
0.25
ZthJK
0.20
0.15
0.10
0.05
R for various conduction angles d:
thJK
d RthJK (K/W)
DC 0.179
180°
0.188
120°
0.196
30°
60°
60° 0.216
120° 30° 0.254
180°
DC Constants for ZthJK calculation:
i R (K/W) t (s)
thi i
0.00
1
0.0066
0.00054
10-3
10-2
10-1
100
101 s
102
2
0.0358
0.098
t
3
0.0831
0.54
4
0.0129
12
5 0.04
12
© 2000 IXYS All rights reserved
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Номер в каталогеОписаниеПроизводители
MDD255-14N1HIgh Power Diode ModulesIXYS Corporation
IXYS Corporation

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