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MDD250-08N1 PDF даташит

Спецификация MDD250-08N1 изготовлена ​​​​«IXYS Corporation» и имеет функцию, называемую «HIgh Power Diode Modules».

Детали детали

Номер произв MDD250-08N1
Описание HIgh Power Diode Modules
Производители IXYS Corporation
логотип IXYS Corporation логотип 

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MDD250-08N1 Даташит, Описание, Даташиты
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High Power
Diode Modules
VRSM
V
900
1300
1500
1700
VRRM
V
800
1200
1400
1600
Type
MDD 250-08N1
MDD 250-12N1
MDD 250-14N1
MDD 250-16N1
MDD 250
IFRMS = 2x 450 A
IFAVM = 2x 290 A
VRRM = 800-1600 V
312
3
2
1
Symbol
IFRMS
IFAVM
I
FSM
òi2dt
TVJ
T
VJM
Tstg
VISOL
Md
Weight
Test Conditions
TVJ = TVJM
TC = 100°C; 180° sine
T
VJ
=
45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 45°C
VR = 0
T =T
VJ VJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
450 A
290 A
11 000
11 700
9000
9600
A
A
A
A
605 000
560 000
405 000
380 000
A2s
A2s
A2s
A2s
-40...+150
150
-40...+125
°C
°C
°C
50/60 Hz, RMS
t = 1 min
IISOL £ 1 mA
t=1s
Mounting torque (M5)
Terminal connection torque (M8)
Typical including screws
3000
3600
V~
V~
2.5-5/22-44 Nm/lb.in.
12-15/106-132 Nm/lb.in.
320 g
Features
q Direct copper bonded Al O -ceramic
23
base plate
q Planar passivated chips
q Isolation voltage 3600 V~
q UL registered, E 72873
Applications
q Supplies for DC power equipment
q DC supply for PWM inverter
q Field supply for DC motors
q Battery DC power supplies
Advantages
q Space and weight savings
q Simple mounting
q Improved temperature and power
cycling
q Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Symbol
IRRM
VF
VT0
r
T
RthJC
RthJK
QS
IRM
d
S
dA
a
Test Conditions
TVJ = TVJM; VR = VRRM
IF = 600 A; TVJ = 25°C
For power-loss calculations only
T =T
VJ VJM
per diode; DC current
per module
other values
per diode; DC current
see Fig. 6/7
per module
TVJ = 125°C, IF = 400 A; -di/dt = 50 A/ms
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
Characteristic Values
40 mA
1.3 V
0.75 V
0.75 mW
0.129
0.065
0.169
0.0845
K/W
K/W
K/W
K/W
760 mC
275 A
12.7 mm
9.6 mm
50 m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
20 12
14
Threaded spacer for higher Anode/Cathode
construction: Type ZY 250, material brass
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MDD250-08N1 Даташит, Описание, Даташиты
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MDD 250
Fig. 1 Surge overload current
IFSM: Crest value, t: duration
Fig. 2 òi2dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
© 2000 IXYS All rights reserved
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
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MDD250-08N1 Даташит, Описание, Даташиты
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MDD 250
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
0.15
K/W
ZthJC
0.10
0.05
Fig. 6 Transient thermal impedance
junction to case (per diode)
30°
DC
RthJC for various conduction angles d:
d
DC
180°
120°
60°
30°
R (K/W)
thJC
0.129
0.131
0.132
0.132
0.133
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
0.0035
0.0099
0.000
10-3
10-2
10-1
100
101 s
102 2
0.0165
0.168
t
3
0.1091
0.456
0.20
K/W
ZthJK
0.15
0.10
Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
30°
DC RthJK for various conduction angles d:
d RthJK (K/W)
DC
180°
120°
60°
30°
0.169
0.171
0.172
0.172
0.173
0.05 Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1
0.0035
0.0099
0.00
2
0.0165
0.168
10-3
10-2
10-1
100
101 s
102 3
0.1091
0.456
t
4 0.04
1.36
© 2000 IXYS All rights reserved
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Номер в каталогеОписаниеПроизводители
MDD250-08N1HIgh Power Diode ModulesIXYS Corporation
IXYS Corporation

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