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MDD142-18N1 PDF даташит

Спецификация MDD142-18N1 изготовлена ​​​​«IXYS Corporation» и имеет функцию, называемую «HIgh Power Diode Modules».

Детали детали

Номер произв MDD142-18N1
Описание HIgh Power Diode Modules
Производители IXYS Corporation
логотип IXYS Corporation логотип 

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MDD142-18N1 Даташит, Описание, Даташиты
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MDD 142
High Power
Diode Modules
IFRMS = 2x 300 A
IFAVM = 2x 165 A
VRRM = 800-1800 V
VRSM
V
900
1300
1500
1700
1900
VRRM
V
800
1200
1400
1600
1800
Type
MDD 142-08N1
MDD 142-12N1
MDD 142-14N1
MDD 142-16N1
MDD 142-18N1
312
2
1
3
Symbol
IFRMS
I
FAVM
IFSM
òi2dt
TVJ
TVJM
Tstg
V
ISOL
Md
Weight
Symbol
IR
VF
VT0
r
T
QS
IRM
RthJC
RthJK
dS
dA
a
Test Conditions
TVJ = TVJM
T
C
=
100°C;
180°
sine
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
=
45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TVJM
V =0
R
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
300 A
165 A
4700
5000
4100
4300
A
A
A
A
110 000
104 000
84 000
77 000
A2s
A2s
A2s
A2s
-40...+150
150
-40...+125
°C
°C
°C
50/60 Hz, RMS
t = 1 min
IISOL £ 1 mA
t=1s
Mounting torque (M6)
Terminal connection torque (M6)
Typical including screws
3000
3600
V~
V~
2.25-2.75/20-25 Nm/lb.in.
4.5-5.5/40-48 Nm/lb.in.
120 g
Test Conditions
TVJ = TVJM; VR = VRRM
IF = 300 A; TVJ = 25°C
For power-loss calculations only
T =T
VJ VJM
TVJ = 125°C; IF = 300 A, -di/dt = 50 A/ms
per diode; DC current
per module
per diode; DC current
per module
other values
see Fig. 6/7
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
Characteristic Values
20 mA
1.3 V
0.8 V
1.3 mW
550 mC
235 A
0.21
0.105
0.31
0.155
K/W
K/W
K/W
K/W
12.7 mm
9.6 mm
50 m/s2
Features
q International standard package
q Direct copper bonded Al2O3 -ceramic
base plate
q Planar passivated chips
q Isolation voltage 3600 V~
q UL registered, E 72873
Applications
q Supplies for DC power equipment
q DC supply for PWM inverter
q Field supply for DC motors
q Battery DC power supplies
Advantages
q Space and weight savings
q Simple mounting
q Improved temperature and power
cycling
q Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
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MDD142-18N1 Даташит, Описание, Даташиты
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MDD 142
Fig. 1 Surge overload current
IFSM: Crest value, t: duration
Fig. 2 òi2dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
© 2000 IXYS All rights reserved
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
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MDD142-18N1 Даташит, Описание, Даташиты
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© 2000 IXYS All rights reserved
MDD 142
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 6 Transient thermal impedance
junction to case (per diode)
RthJC for various conduction angles d:
d
DC
180°
120°
60°
30°
RthJC (K/W)
0.210
0.223
0.233
0.260
0.295
Constants for Z calculation:
thJC
i
Rthi (K/W)
ti (s)
1
0.0087
0.001
2
0.0163
0.065
3 0.185
0.4
Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
RthJK for various conduction angles d:
d
DC
180°
120°
60°
30°
R (K/W)
thJK
0.31
0.323
0.333
0.360
0.395
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1
0.0087
0.001
2
0.0163
0.065
3 0.185
0.4
4 0.1
1.29
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Номер в каталогеОписаниеПроизводители
MDD142-18N1HIgh Power Diode ModulesIXYS Corporation
IXYS Corporation

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