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MDD56-18N1B PDF даташит

Спецификация MDD56-18N1B изготовлена ​​​​«IXYS Corporation» и имеет функцию, называемую «HIgh Power Diode Modules».

Детали детали

Номер произв MDD56-18N1B
Описание HIgh Power Diode Modules
Производители IXYS Corporation
логотип IXYS Corporation логотип 

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MDD56-18N1B Даташит, Описание, Даташиты
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Diode Modules
MDD 56
IFRMS = 2x 150 A
IFAVM = 2x 95 A
VRRM = 800-1800 V
VRSM
V
900
1300
1500
1700
1900
VRRM
V
800
1200
1400
1600
1800
Type
MDD 56-08N1 B
MDD 56-12N1 B
MDD 56-14N1 B
MDD 56-16N1 B
MDD 56-18N1 B
3 1 2 TO-240 AA
3
2
1
Symbol
I
FRMS
IFAVM
IFSM
òi2dt
TVJ
TVJM
Tstg
V
ISOL
Md
Weight
Test Conditions
T =T
VJ VJM
TC = 75°C; 180° sine
T
C
=
100°C;
180°
sine
TVJ = 45°C;
VR = 0
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
=
45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T =T
VJ VJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
50/60 Hz, RMS
t = 1 min
IISOL £ 1 mA
t=1s
Mounting torque (M5)
Terminal connection torque (M5)
Typical including screws
Maximum Ratings
150 A
95 A
71 A
1400
1650
1200
1400
A
A
A
A
9800
11300
7200
8100
A2s
A2s
A2s
A2s
-40...+150
150
-40...+125
°C
°C
°C
3000
3600
V~
V~
2.5-4/22-35 Nm/lb.in.
2.5-4/22-35 Nm/lb.in.
90 g
Symbol
IR
VF
VT0
r
T
QS
IRM
RthJC
RthJK
dS
dA
a
Test Conditions
TVJ = TVJM; VR = VRRM
IF = 200 A; TVJ = 25°C
For power-loss calculations only
T =T
VJ VJM
TVJ = 125°C; IF = 50 A, -di/dt = 3 A/ms
per diode; DC current
per module
per diode; DC current
per module
other values
see Fig. 6/7
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
Characteristic Values
10 mA
1.48 V
0.8 V
3 mW
100 mC
24 A
0.51
0.255
0.71
0.355
K/W
K/W
K/W
K/W
12.7 mm
9.6 mm
50 m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
Features
q International standard package
JEDEC TO-240 AA
q Direct copper bonded Al O -ceramic
23
base plate
q Planar passivated chips
q Isolation voltage 3600 V~
q UL registered, E 72873
Applications
q Supplies for DC power equipment
q DC supply for PWM inverter
q Field supply for DC motors
q Battery DC power supplies
Advantages
q Space and weight savings
q Simple mounting
q Improved temperature and power
cycling
q Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
© 2000 IXYS All rights reserved
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MDD56-18N1B Даташит, Описание, Даташиты
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MDD 56
Fig. 1 Surge overload current
IFSM: Crest value, t: duration
Fig. 2 òi2dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
© 2000 IXYS All rights reserved
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
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MDD56-18N1B Даташит, Описание, Даташиты
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© 2000 IXYS All rights reserved
MDD 56
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 6 Transient thermal impedance
junction to case (per diode)
RthJC for various conduction angles d:
d
DC
180°
120°
60°
30°
RthJC (K/W)
0.51
0.53
0.55
0.58
0.62
Constants for Z calculation:
thJC
i
Rthi (K/W)
ti (s)
1 0.013
0.0015
2 0.055
0.045
3 0.442
0.485
Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
RthJK for various conduction angles d:
d
DC
180°
120°
60°
30°
R (K/W)
thJK
0.71
0.73
0.75
0.78
0.82
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1 0.013
0.0015
2 0.055
0.045
3 0.442
0.485
4 0.2
1.25
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Номер в каталогеОписаниеПроизводители
MDD56-18N1BHIgh Power Diode ModulesIXYS Corporation
IXYS Corporation

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